MT47H256M8EB-25E IT:C Micron Technology Inc, MT47H256M8EB-25E IT:C Datasheet - Page 123
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MT47H256M8EB-25E IT:C
Manufacturer Part Number
MT47H256M8EB-25E IT:C
Description
256MX8 DDR2 SDRAM PLASTIC PBF FBGA 1.8V
Manufacturer
Micron Technology Inc
Datasheet
1.MT47H256M8EB-25E_ITC.pdf
(134 pages)
Specifications of MT47H256M8EB-25E IT:C
Lead Free Status / RoHS Status
Compliant
- Current page: 123 of 134
- Download datasheet (10Mb)
Figure 75: REFRESH Command-to-Power-Down Entry
Figure 76: ACTIVATE Command-to-Power-Down Entry
PDF: 09005aef824f87b6
2gbddr2.pdf – Rev. E 06/10 EN
Note:
Note:
Command
Command
Address
1. The earliest precharge power-down entry may occur is at T2, which is 1 ×
1. The earliest active power-down entry may occur is at T2, which is 1 ×
CK#
CKE
CK#
CKE
CK
CK
REFRESH command. Precharge power-down entry occurs prior to
fied.
VATE command. Active power-down entry occurs prior to
Valid
Valid
T0
T0
REFRESH
VALID
ACT
T1
T1
123
1 t CK
1 x t CK
Power-down 1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Power-down 1
entry
entry
NOP
NOP
T2
T2
2Gb: x4, x8, x16 DDR2 SDRAM
t CKE (MIN)
t CKE (MIN)
T3
T3
t
RCD (MIN) being satisfied.
Power-Down Mode
© 2006 Micron Technology, Inc. All rights reserved.
Don’t Care
Don’t Care
t
RFC (MIN) being satis-
t
CK after the ACTI-
t
CK after the
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