MT48H8M16LFB4-75:K Micron Technology Inc, MT48H8M16LFB4-75:K Datasheet - Page 52

• Manufacturer Part Number: MT48H8M16LFB4-75:K
• Description: DRAM Chip Mobile SDRAM 128M-Bit 8Mx16 1.8V 54-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr
• Series: -r

Specifications of MT48H8M16LFB4-75:K

• Package: 54VFBGA
• Density: 128 Mb
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Clock Rate: 133 MHz
• Maximum Random Access Time: 8|5.4 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 132MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 54-VFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 22: Terminating a READ Burst
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
Note:
Continuous-page READ bursts can be truncated with a BURST TERMINATE command
and fixed-length READ bursts can be truncated with a BURST TERMINATE command,
provided that auto precharge was not activated. The BURST TERMINATE command
should be issued x cycles before the clock edge at which the last desired data element is
valid, where x = CL - 1. This is shown in Figure 22 (page 52) for each possible CAS
latency; data element n + 3 is the last desired data element of a longer burst.
Command
Command
1. DQM is LOW.
Address
Address
CLK
CLK
DQ
DQ
Bank,
T0
Col n
T0
READ
Bank,
READ
Col n
CL = 2
CL = 3
T1
T1
NOP
NOP
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
52
T2
T2
NOP
NOP
D
OUT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T3
T3
NOP
NOP
D
D
OUT
OUT
TERMINATE
TERMINATE
BURST
BURST
T4
T4
X = 1 cycle
D
D
OUT
OUT
Transitioning data
X = 2 cycles
T5
T5
NOP
NOP
D
D
OUT
OUT
©2008 Micron Technology, Inc. All rights reserved.
T6
T6
READ Operation
NOP
NOP
D
OUT
Don’t Care
T7
NOP