MT48H8M16LFB4-75:K Micron Technology Inc, MT48H8M16LFB4-75:K Datasheet - Page 58

• Manufacturer Part Number: MT48H8M16LFB4-75:K
• Description: DRAM Chip Mobile SDRAM 128M-Bit 8Mx16 1.8V 54-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr
• Series: -r

Specifications of MT48H8M16LFB4-75:K

• Package: 54VFBGA
• Density: 128 Mb
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Clock Rate: 133 MHz
• Maximum Random Access Time: 8|5.4 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 132MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 54-VFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 28: Random WRITE Cycles
Figure 29: WRITE-to-READ
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
Note:
Note:
Command
Command
Address
Address
1. Each WRITE command can be issued to any bank. DQM is LOW.
1. The WRITE command can be issued to any bank, and the READ command can be to any
bank. DQM is LOW. CL = 2 for illustration.
CLK
CLK
DQ
DQ
WRITE
WRITE
Bank,
Bank,
Col n
Col n
D
D
T0
T0
IN
IN
WRITE
Bank,
Col a
NOP
D
T1
T1
D
IN
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
IN
58
WRITE
Bank,
Col x
READ
Bank,
Col b
D
T2
T2
IN
Don’t Care
Micron Technology, Inc. reserves the right to change products or specifications without notice.
WRITE
Bank,
Col m
T3
T3
NOP
D
IN
D
NOP
T4
OUT
Don’t Care
NOP
D
T5
OUT
©2008 Micron Technology, Inc. All rights reserved.
WRITE Operation