M29W256GH7AN6E NUMONYX, M29W256GH7AN6E Datasheet - Page 62
M29W256GH7AN6E
Manufacturer Part Number
M29W256GH7AN6E
Description
Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 70ns 56-Pin TSOP Tray
Manufacturer
NUMONYX
Datasheet
1.M29W256GH70ZS6F.pdf
(97 pages)
Specifications of M29W256GH7AN6E
Package
56TSOP
Cell Type
NOR
Density
256 Mb
Architecture
Sectored
Block Organization
Symmetrical
Location Of Boot Block
Bottom|Top
Typical Operating Supply Voltage
3|3.3 V
Sector Size
128KByte x 256
Timing Type
Asynchronous
Operating Temperature
-40 to 85 °C
Interface Type
Parallel
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M29W256GH7AN6E
Manufacturer:
MICRON
Quantity:
1 400
Part Number:
M29W256GH7AN6E
Manufacturer:
MICRON/镁光
Quantity:
20 000
Figure 13. Random read AC waveforms (8-bit mode)
Note:
Figure 14. Random read AC waveforms (16-bit mode)
Note:
62/97
A0-A23/
A–1
E
G
DQ0-DQ7
BYTE
A0-A23
E
G
DQ0-DQ14,
DQ15A–1
BYTE
BYTE = V
BYTE = V
tELBL/tELBH
tELBL/tELBH
IL
IH
tBHQV
tAVQV
tBHQV
tAVQV
tELQX
(8-bit mode)
tELQX
tELQV
(8-bit mode)
tGLQX
tELQV
tGLQX
tGLQV
tGLQV
tAVAV
VALID
tAVAV
VALID
tBLQZ
tBLQZ
VALID
VALID
tGHQX
tGHQZ
tGHQX
tGHQZ
tEHQZ
tEHQZ
tEHQX
tAXQX
tEHQX
tAXQX
AI08970
AI13698