PUMD10,115 NXP Semiconductors, PUMD10,115 Datasheet - Page 6

• Manufacturer Part Number: PUMD10,115
• Description: TRANS NPN/PNP 50V 100MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of PUMD10,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 5V
• Vce Saturation (max) @ Ib, Ic: 100mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 2.2 KOhms
• Typical Resistor Ratio: 0.047
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055239115; PUMD10 T/R; PUMD10 T/R

NXP Semiconductors
PACKAGE OUTLINES
2004 Apr 15
NPN/PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ
Plastic surface-mounted package; 6 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT666
0.6
0.5
A
S
0.27
0.17
b
p
pin 1 index
0.18
0.08
c
IEC
Y S
6
1
e 1
1.7
1.5
D
D
e
1.3
1.1
b p
E
5
2
JEDEC
0
1.0
e
REFERENCES
3
4
0.5
e
1
w
A
M
A
1.7
1.5
H
E
JEITA
scale
1
6
0.3
0.1
L
p
0.1
w
A
0.1
y
2 mm
H E
E
detail X
PROJECTION
EUROPEAN
PEMD10; PUMD10
L p
c
X
Product data sheet
ISSUE DATE
04-11-08
06-03-16
SOT666