PUMD3,165 NXP Semiconductors, PUMD3,165 Datasheet - Page 4

• Manufacturer Part Number: PUMD3,165
• Description: TRANS NPN/PNP 50V 100MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of PUMD3,165

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 10 KOhms
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934050170165; PUMD3 /T2; PUMD3 /T2

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
PEMD3_PIMD3_PUMD3_10
Product data sheet
Table 7.
[1]
[2]
[3]
Table 8.
T
Symbol
Per transistor
R
Per device
R
Symbol Parameter
Per transistor; for the PNP transistor with negative polarity
I
I
I
h
V
V
V
R1
R2/R1
C
CBO
CEO
EBO
amb
FE
CEsat
I(off)
I(on)
th(j-a)
th(j-a)
c
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB with 65 μm copper strip line, standard footprint.
Reflow soldering is the only recommended soldering method.
= 25
°
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input voltage V
on-state input voltage V
bias resistor 1 (input)
bias resistor ratio
collector capacitance V
C unless otherwise specified.
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to ambient
Thermal characteristics
Characteristics
TR1 (NPN)
TR2 (PNP)
SOT363
SOT457
SOT666
SOT363
SOT457
SOT666
Rev. 10 — 15 November 2009
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
Conditions
V
V
V
T
V
V
I
f = 1 MHz
C
j
CB
CE
CE
EB
CE
CE
CE
CB
= 150 °C
= 10 mA; I
Conditions
in free air
in free air
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 0.3 V; I
= 10 V; I
PEMD3; PIMD3; PUMD3
C
C
C
E
B
B
B
E
= 0 A
= 5 mA
= 100 μA
C
= 0.5 mA
= 0 A
= 0 A
= 0 A;
= i
= 10 mA
e
= 0 A;
[1][3]
[1][3]
[1]
[2]
[1]
[2]
Min
-
-
-
-
-
-
Min
-
-
-
-
30
-
-
2.5
7
0.8
-
-
-
Typ
-
-
-
-
-
-
Typ
-
-
-
-
-
-
1.1
1.8
10
1
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
625
417
625
416
208
416
Max
100
1
50
400
-
150
0.8
-
13
1.2
-
2.5
3
Unit
K/W
K/W
K/W
K/W
K/W
K/W
Unit
nA
μA
μA
μA
V
V
kΩ
pF
pF
mV
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