PUMH13,115 NXP Semiconductors, PUMH13,115 Datasheet - Page 4

• Manufacturer Part Number: PUMH13,115
• Description: TRANS NPN 50V 100MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of PUMH13,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 5V
• Vce Saturation (max) @ Ib, Ic: 100mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: NPN/NPN
• Typical Input Resistor: 4.7 KOhms
• Typical Resistor Ratio: 0.1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Emitter- Base Voltage Vebo: 10 V
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057894115; PUMH13 T/R; PUMH13 T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
CHARACTERISTICS
T
2004 Apr 14
Per transistor
R
Per device
R
Per transistor
I
I
I
h
V
V
V
R1
C
SYMBOL
R2
------- -
R1
amb
CBO
CEO
EBO
SYMBOL
FE
CEsat
i(off)
i(on)
NPN/NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 47 kΩ
th(j-a)
th(j-a)
c
= 25 °C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
thermal resistance from junction to ambient
thermal resistance from junction to ambient
SOT363
SOT666
SOT363
SOT666
PARAMETER
PARAMETER
V
V
V
V
V
V
V
V
f = 1 MHz
C
CB
CE
CE
EB
CE
CE
CE
CB
= 5 mA; I
= 5 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 10 V; I
= 5 V; I
= 0.3 V; I
4
CONDITIONS
C
B
C
C
T
note 1
notes 1 and 2
T
note 1
notes 1 and 2
E
B
B
E
= 0.25 mA
= 0 A
= 10 mA
= 100 μA
C
amb
amb
= 0 A
= 0 A
= 0 A; T
= i
= 5 mA
CONDITIONS
e
≤ 25 °C
≤ 25 °C
= 0 A;
j
= 150 °C
−
−
−
−
100
−
−
1.3
3.3
8
−
MIN.
PEMH13; PUMH13
VALUE
625
625
416
416
−
−
−
−
−
−
0.6
0.9
4.7
10
−
TYP.
Product data sheet
100
1
50
170
−
100
0.5
−
6.1
12
2.5
MAX.
UNIT
K/W
K/W
K/W
K/W
nA
μA
μA
μA
mV
V
V
kΩ
pF
UNIT