PUMD10,125 NXP Semiconductors, PUMD10,125 Datasheet - Page 4

• Manufacturer Part Number: PUMD10,125
• Description: TRANS ARRAY NPN/PNP SOT-363
• Manufacturer: NXP Semiconductors

Specifications of PUMD10,125

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 5V
• Vce Saturation (max) @ Ib, Ic: 100mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055239125

NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Transistor mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
2004 Apr 15
Per transistor
R
Per device
R
SYMBOL
NPN/PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ
th(j-a)
th(j-a)
thermal resistance from junction to
ambient
thermal resistance from junction to
ambient
SOT363
SOT666
SOT363
SOT666
PARAMETER
note 1
notes 1 and 2
note 1
notes 1 and 2
4
CONDITIONS
PEMD10; PUMD10
VALUE
625
625
416
416
Product data sheet
UNIT
K/W
K/W
K/W
K/W