PUMD2,125 NXP Semiconductors, PUMD2,125 Datasheet - Page 14

• Manufacturer Part Number: PUMD2,125
• Description: TRANS ARRAY NPN/PNP SOT-363
• Manufacturer: NXP Semiconductors

Specifications of PUMD2,125

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 22K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934049950125

NXP Semiconductors
11. Revision history
Table 10.
PEMD2_PIMD2_PUMD2_7
Product data sheet
Document ID
PEMD2_PIMD2_PUMD2_7
Modifications:
PEMD2_PIMD2_PUMD2_6
Revision history
Release date
20080924
20040421
•
•
•
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Table 8
Figure
Section 12 “Legal
1, 2, 3, 4, 5, 6, 7, 8,
“Characteristics”: V
Rev. 07 — 24 September 2008
NPN/PNP resistor-equipped transistors; R1 = 22 k , R2 = 22 k
Data sheet status
Product data sheet
Product specification
information”: updated
CEsat
9
and 10: added
unit corrected
PEMD2; PIMD2; PUMD2
Change notice
-
-
Supersedes
PEMD2_PIMD2_PUMD2_6
PEMD2_PIMD2_PUMD2_5
© NXP B.V. 2008. All rights reserved.
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