PUMH9,125 NXP Semiconductors, PUMH9,125 Datasheet - Page 6

• Manufacturer Part Number: PUMH9,125
• Description: TRANS ARRAY NPN/NPN SOT-363
• Manufacturer: NXP Semiconductors

Specifications of PUMH9,125

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 100mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055557125

NXP Semiconductors
2004 Apr 14
NPN/NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
Plastic surface-mounted package (TSOP6); 6 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT457
1.1
0.9
A
y
0.013
0.1
A 1
pin 1
index
6
1
0.40
0.25
b p
e
IEC
0.26
0.10
c
D
5
2
3.1
2.7
D
b p
JEDEC
1.7
1.3
E
REFERENCES
0
4
3
0.95
e
w
M
H E
3.0
2.5
B
SC-74
B
JEITA
scale
6
1
0.6
0.2
L p
A
0.33
0.23
Q
A 1
2 mm
0.2
v
PIMH9; PUMH9; PEMH9
0.2
w
H E
E
detail X
PROJECTION
0.1
EUROPEAN
y
L p
Q
A
c
Product data sheet
ISSUE DATE
05-11-07
06-03-16
X
v
M
SOT457
A