PUMH9,135 NXP Semiconductors, PUMH9,135 Datasheet - Page 6

TRANS NPN 50V 100MA SOT363

PUMH9,135

Manufacturer Part Number
PUMH9,135
Description
TRANS NPN 50V 100MA SOT363
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PUMH9,135

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
100mV @ 250µA, 5mA
Current - Collector Cutoff (max)
1µA
Power - Max
300mW
Mounting Type
Surface Mount
Configuration
Dual
Transistor Polarity
NPN
Typical Input Resistor
10 KOhms
Typical Resistor Ratio
0.213
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055557135
PUMH9 /T3
PUMH9 /T3
NXP Semiconductors
2004 Apr 14
NPN/NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
Plastic surface-mounted package (TSOP6); 6 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT457
1.1
0.9
A
y
0.013
0.1
A 1
pin 1
index
6
1
0.40
0.25
b p
e
IEC
0.26
0.10
c
D
5
2
3.1
2.7
D
b p
JEDEC
1.7
1.3
E
REFERENCES
0
4
3
0.95
e
w
M
H E
3.0
2.5
B
SC-74
B
JEITA
scale
6
1
0.6
0.2
L p
A
0.33
0.23
Q
A 1
2 mm
0.2
v
PIMH9; PUMH9; PEMH9
0.2
w
H E
E
detail X
PROJECTION
0.1
EUROPEAN
y
L p
Q
A
c
Product data sheet
ISSUE DATE
05-11-07
06-03-16
X
v
M
SOT457
A

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