PUMB15,115 NXP Semiconductors, PUMB15,115 Datasheet - Page 3

• Manufacturer Part Number: PUMB15,115
• Description: TRANS PNP/PNP 50V 100MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of PUMB15,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 10mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: PNP
• Typical Input Resistor: 4.7 KOhms
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057884115; PUMB15 T/R; PUMB15 T/R

NXP Semiconductors
5. Limiting values
6. Thermal characteristics
PEMB15_PUMB15_4
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Table 7.
[1]
[2]
Symbol
Per transistor
V
V
V
V
I
I
P
T
T
T
Per device
P
Symbol
Per transistor
R
Per device
R
O
CM
stg
j
amb
CBO
CEO
EBO
I
tot
tot
th(j-a)
th(j-a)
Device mounted on a FR4 printed-circuit board, single-sided copper, standard footprint.
Reflow soldering is the only recommended soldering method.
Device mounted on a FR4 printed-circuit board, single-sided copper, standard footprint.
Reflow soldering is the only recommended soldering method.
Limiting values
Thermal characteristics
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
ambient temperature
total power dissipation
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to ambient
positive
negative
SOT363
SOT666
SOT363
SOT666
SOT363
SOT666
SOT363
SOT666
PNP/PNP resistor-equipped transistors; R1 = 4.7 k , R2 = 4.7 k
Rev. 04 — 31 August 2009
Conditions
T
T
Conditions
open emitter
open base
open collector
T
T
amb
amb
amb
amb
25 C
25 C
25 C
25 C
PEMB15; PUMB15
[1] [2]
[1] [2]
[1] [2]
[1] [2]
[1]
[1]
[1]
[1]
Min
-
-
-
-
Min
-
-
-
-
-
-
-
-
-
-
-
-
65
65
Typ
-
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
+10
200
200
+150
150
+150
300
300
50
50
10
30
100
100
Max
625
625
416
416
Unit
V
V
V
V
V
mA
mA
mW
mW
mW
mW
C
C
C
Unit
K/W
K/W
K/W
K/W
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