PEMB3,115 NXP Semiconductors, PEMB3,115 Datasheet

TRANS PNP/PNP 50V 100MA SOT666

PEMB3,115

Manufacturer Part Number
PEMB3,115
Description
TRANS PNP/PNP 50V 100MA SOT666
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PEMB3,115

Package / Case
SS Mini-6 (SOT-666)
Transistor Type
2 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 1mA, 5V
Vce Saturation (max) @ Ib, Ic
100mV @ 250µA, 5mA
Current - Collector Cutoff (max)
1µA
Power - Max
300mW
Mounting Type
Surface Mount
Configuration
Dual
Transistor Polarity
PNP
Typical Input Resistor
4.7 KOhm
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Resistor - Emitter Base (r2) (ohms)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056867115
PEMB3 T/R
PEMB3 T/R
Product data sheet
Supersedes data of 2001 Sep 19
DATA SHEET
PEMB3; PUMB3
PNP/PNP resistor-equipped
transistors; R1 = 4.7 kΩ, R2 = open
DISCRETE SEMICONDUCTORS
2003 Oct 15

Related parts for PEMB3,115

PEMB3,115 Summary of contents

Page 1

DATA SHEET PEMB3; PUMB3 PNP/PNP resistor-equipped transistors 4.7 kΩ open Product data sheet Supersedes data of 2001 Sep 19 DISCRETE SEMICONDUCTORS 2003 Oct 15 ...

Page 2

... NXP Semiconductors PNP/PNP resistor-equipped transistors 4.7 kΩ open FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral drivers • Replacement of general purpose transistors in digital applications • Control of IC inputs. ...

Page 3

... NXP Semiconductors PNP/PNP resistor-equipped transistors 4.7 kΩ open ORDERING INFORMATION TYPE NUMBER NAME − PEMB3 − PUMB3 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER Per transistor V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO ...

Page 4

... NXP Semiconductors PNP/PNP resistor-equipped transistors 4.7 kΩ open THERMAL CHARACTERISTICS SYMBOL PARAMETER Per transistor R thermal resistance from junction to ambient th j-a SOT363 SOT666 Per device R thermal resistance from junction to ambient th j-a SOT363 SOT666 Notes 1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. ...

Page 5

... NXP Semiconductors PNP/PNP resistor-equipped transistors 4.7 kΩ open PACKAGE OUTLINES Plastic surface mounted package; 6 leads pin 1 index DIMENSIONS (mm are the original dimensions) UNIT 0.6 0.27 0.18 1.7 mm 0.5 0.17 0.08 1.5 OUTLINE VERSION IEC SOT666 2003 Oct scale 1.3 1.7 0.3 1 ...

Page 6

... NXP Semiconductors PNP/PNP resistor-equipped transistors 4.7 kΩ open Plastic surface mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.30 0.25 mm 0.1 0.20 0.8 0.10 OUTLINE VERSION IEC SOT363 2003 Oct scale 2.2 1.35 2.2 1.3 ...

Page 7

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 8

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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