PEMD13,115 NXP Semiconductors, PEMD13,115 Datasheet - Page 2

• Manufacturer Part Number: PEMD13,115
• Description: TRANS NPN/PNP 50V 100MA SOT666
• Manufacturer: NXP Semiconductors

Specifications of PEMD13,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 5V
• Vce Saturation (max) @ Ib, Ic: 100mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 4.7 KOhm
• Typical Resistor Ratio: 0.1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Collector-emitter Voltage: 50V
• Dc Current Gain (min): 100
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SOT-666
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934056866115; PEMD13 T/R; PEMD13 T/R

NXP Semiconductors
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• Low current peripheral driver
• Replacement of general purpose transistors in digital
• Control of IC inputs.
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
2003 Oct 08
PEMD13
PUMD13
PEMD13
PUMD13
NUMBER
TYPE NUMBER
applications
NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 47 kΩ
TYPE
* = t: Made in Malaysia.
* = W: Made in China.
PHILIPS
SOT666
SOT363
PACKAGE
Top view
6
1
SC-88
EIAJ
SIMPLIFIED OUTLINE AND SYMBOL
5
2
3
4
MARKING CODE
3*1
TR1
Z1
6
1
2
(1)
QUICK REFERENCE DATA
DESCRIPTION
NPN/PNP resistor-equipped transistors (see “Simplified
outline, symbol and pinning” for package details).
V
I
TR1
TR2
R1
R2
SYMBOL
O
CEO
R1
R2
5
2
R2
R1
PEMB13
PUMB13
collector-emitter
voltage
output current (DC)
NPN
PNP
bias resistor
bias resistor
MAM468
COMPLEMENT
4
3
TR2
PARAMETER
PNP/PNP
PEMD13; PUMD13
PIN
1
2
3
4
5
6
−
−
−
−
4.7
47
PEMH13
PUMH13
TYP.
Product data sheet
COMPLEMENT
PINNING
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
NPN/NPN
DESCRIPTION
50
100
−
−
−
−
MAX.
V
mA
−
−
kΩ
kΩ
UNIT