PUMH11,115 NXP Semiconductors, PUMH11,115 Datasheet - Page 6

TRANS PREBIASED DUAL NPN SOT666

PUMH11,115

Manufacturer Part Number
PUMH11,115
Description
TRANS PREBIASED DUAL NPN SOT666
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PUMH11,115

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (max)
1µA
Power - Max
300mW
Mounting Type
Surface Mount
Configuration
Dual
Transistor Polarity
NPN
Typical Input Resistor
10 KOhm
Typical Resistor Ratio
1
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Collector-emitter Voltage
50V
Dc Current Gain (min)
30
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
SC-88
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Compliant
Other names
568-5041-2
934049930115
PUMH11 T/R
PUMH11 T/R
PUMH11,115

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PUMH11,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
2003 Oct 20
Plastic surface mounted package; 6 leads
NPN/NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩ
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT363
1.1
0.8
A
max
0.1
A 1
1
6
0.30
0.20
b p
y
IEC
pin 1
index
e 1
0.25
0.10
c
D
e
2
5
2.2
1.8
b p
D
JEDEC
1.35
1.15
E
4
3
REFERENCES
0
1.3
e
w
B
M
B
0.65
e
1
SC-88
scale
EIAJ
6
1
H E
2.2
2.0
A
0.45
0.15
L p
A 1
2 mm
0.25
0.15
Q
H E
E
0.2
v
detail X
PROJECTION
0.2
EUROPEAN
w
PEMH11; PUMH11
L p
Q
0.1
A
y
c
Product data sheet
X
v
ISSUE DATE
M
97-02-28
A
SOT363

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