PBLS2002S,115 NXP Semiconductors, PBLS2002S,115 Datasheet - Page 14

• Manufacturer Part Number: PBLS2002S,115
• Description: LOADSWITCH PNP 20V 3A 8-SOIC
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBLS2002S,115

• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Type: 1 NPN Pre-Biased, 1 PNP
• Current - Collector (ic) (max): 100mA, 3A
• Voltage - Collector Emitter Breakdown (max): 50V, 20V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 10mA, 5V / 150 @ 2A, 2V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A
• Current - Collector Cutoff (max): 1µA, 100nA
• Frequency - Transition: 100MHz
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Configuration: Dual Dual Collector
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 4.7 KOhms at NPN
• Typical Resistor Ratio: 1 at NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V at NPN, 20 V at PNP
• Peak Dc Collector Current: 100 mA at NPN, 3000 mA at PNP
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060278115; PBLS2002S T/R; PBLS2002S T/R

NXP Semiconductors
12. Revision history
Table 9.
PBLS2002S_2
Product data sheet
Document ID
PBLS2002S_2
Modifications:
PBLS2002S_1
Revision history
Release date
20090824
20060804
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Data sheet status
Product data sheet
Product data sheet
Rev. 02 — 24 August 2009
Change notice
-
-
20 V PNP BISS loadswitch
PBLS2002S
Supersedes
PBLS2002S_1
-
© NXP B.V. 2009. All rights reserved.
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