PBLS2001S,115 NXP Semiconductors, PBLS2001S,115 Datasheet - Page 6

• Manufacturer Part Number: PBLS2001S,115
• Description: LOADSWITCH PNP 20V 3A 8-SOIC
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBLS2001S,115

• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Type: 1 NPN Pre-Biased, 1 PNP
• Current - Collector (ic) (max): 100mA, 3A
• Voltage - Collector Emitter Breakdown (max): 50V, 20V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 20mA, 5V / 150 @ 2A, 2V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A
• Current - Collector Cutoff (max): 1µA, 100nA
• Frequency - Transition: 100MHz
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Configuration: Dual Dual Collector
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 2.2 KOhm @ NPN
• Typical Resistor Ratio: 1 @ NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V @ NPN or 20 V @ PNP
• Peak Dc Collector Current: 100 mA @ NPN or 3000 mA @ PNP
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060277115; PBLS2001S T/R; PBLS2001S T/R

NXP Semiconductors
7. Characteristics
PBLS2001S_2
Product data sheet
Fig 4.
Z
(K/W)
th(j-a)
10
10
10
1
3
2
10
Ceramic PCB, Al
TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration; typical
values
4
duty cycle =
0.75
0.33
0.05
0.02
0.01
1.0
0.5
0.2
0.1
0
10
Table 7.
T
2
Symbol Parameter
TR1; PNP low V
I
I
I
h
V
R
CBO
CES
EBO
O
amb
3
FE
CEsat
CEsat
3
, standard footprint
= 25 C unless otherwise specified
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
Characteristics
10
2
CEsat
(BISS) transistor
Rev. 02 — 24 August 2009
10
1
Conditions
V
V
T
V
V
V
V
V
V
V
I
I
I
I
I
I
I
C
C
C
C
C
C
C
j
CB
CB
CE
EB
CE
CE
CE
CE
CE
= 150 C
= 0.5 A; I
= 1 A; I
= 2 A; I
= 2 A; I
= 3 A; I
= 2 A; I
= 2 A; I
= 20 V; I
= 20 V; I
= 20 V; V
= 5 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
1
B
B
B
B
B
B
= 50 mA
= 100 mA
= 200 mA
= 300 mA
= 100 mA
= 200 mA
C
C
C
C
C
C
B
E
E
= 0 A
= 50 mA
= 0.1 A
= 0.5 A
= 1 A
= 2 A
= 3 A
BE
= 0 A
= 0 A;
= 0 V
10
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
220
220
200
150
100
-
-
-
-
-
-
-
20 V PNP BISS loadswitch
PBLS2001S
10
2
Typ
-
-
-
-
420
360
310
235
180
80
75
45
90
160
150
220
© NXP B.V. 2009. All rights reserved.
t
p
006aaa811
(s)
Max
-
-
-
-
-
130
120
100
50
100
100
75
140
255
240
355
10
3
Unit
nA
nA
nA
mV
mV
mV
mV
mV
m
m
A
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