NSB1706DMW5T1G ON Semiconductor, NSB1706DMW5T1G Datasheet - Page 28

• Manufacturer Part Number: NSB1706DMW5T1G
• Description: TRANS BRT NPN DUAL 50V SOT353
• Manufacturer: ON Semiconductor

Specifications of NSB1706DMW5T1G

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: NSB1706DMW5T1GOS

Final Product/Process Change Notification #16266
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Issue Date: 08 Jun 2009
Rev.14 Jun 2007
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