BCR 116S H6327 Infineon Technologies, BCR 116S H6327 Datasheet - Page 2

• Manufacturer Part Number: BCR 116S H6327
• Description: TRANS NPN DGTL 50V 100MA SOT363
• Manufacturer: Infineon Technologies

Specifications of BCR 116S H6327

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 150MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Details

Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation-
BCR116, T
BCR116S, T
BCR116W, T
Junction temperature
Storage temperature
1
Thermal Resistance
Parameter
Junction - soldering point
BCR116
BCR116S
BCR116W
For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
S
S
≤ 102°C
S
≤ 115°C
≤ 124°C
1)
2
Symbol
V
V
V
V
I
P
T
T
Symbol
R
C
j
stg
CEO
CBO
i(fwd)
i(rev)
tot
thJS
-65 ... 150
Value
Value
≤ 240
≤ 140
≤ 105
200
250
250
100
150
50
50
30
5
BCR116...
2011-08-19
Unit
V
mA
mW
°C
Unit
K/W