NSTB1002DXV5T1G ON Semiconductor, NSTB1002DXV5T1G Datasheet - Page 2

• Manufacturer Part Number: NSTB1002DXV5T1G
• Description: TRANSISTOR BRT NPN/PNP SOT-553
• Manufacturer: ON Semiconductor

Specifications of NSTB1002DXV5T1G

• Transistor Type: 1 NPN Pre-Biased, 1 PNP
• Current - Collector (ic) (max): 100mA, 200mA
• Voltage - Collector Emitter Breakdown (max): 50V, 40V
• Resistor - Base (r1) (ohms): 47K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V / 100 @ 1mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA / 400mV @ 5mA, 50mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-553, SOT-5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
Q1 TRANSISTOR: PNP
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
SMALL− SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Q2 TRANSISTOR: NPN
OFF CHARACTERISTICS
2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.
Collector −Emitter Breakdown Voltage (Note 2)
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Current −Gain − Bandwidth Product
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small −Signal Current Gain
Output Admittance
Noise Figure
Delay Time
Rise Time
Storage Time
Fall Time
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
(V
(V
(V
(V
(V
(V
(V
C
C
C
C
C
C
C
C
C
CE
CE
CE
CE
CE
CB
CB
EB
= −0.1 mAdc, V
= −1.0 mAdc, V
= −10 mAdc, V
= −50 mAdc, V
= −100 mAdc, V
= −10 mAdc, I
= −50 mAdc, I
= −10 mAdc, I
= −50 mAdc, I
= 6.0, I
= −10 Vdc, I
= −10 Vdc, I
= −10 Vdc, I
= −10 Vdc, I
= −5.0 Vdc, I
= 50 V, I
= 50 V, I
Characteristic
C
E
B
= 5.0 mA)
= 0)
= 0)
B
B
B
B
C
C
C
C
CE
CE
C
CE
CE
= −1.0 mAdc)
= −5.0 mAdc)
= −1.0 mAdc)
= −5.0 mAdc)
CE
= −1.0 mAdc, f = 1.0 kHz)
= −1.0 mAdc, f = 1.0 kHz)
= −1.0 mAdc, f = 1.0 kHz)
= −1.0 mAdc, f = 1.0 kHz)
= −100 mAdc, R
= −1.0 Vdc)
= −1.0 Vdc)
= −1.0 Vdc)
= −1.0 Vdc)
= −1.0 Vdc)
NSTB1002DXV5T1G, NSTB1002DXV5T5G
S
= 1.0 kW, f = 1.0 kHz)
(T
A
= 25°C unless otherwise noted)
(I
(V
(V
C
CC
CC
= −10 mAdc, I
(I
http://onsemi.com
= −3.0 Vdc, I
= −3.0 Vdc, V
B1
= I
Symbol
B2
I
I
I
CBO
CEO
= −1.0 mAdc)
EBO
B1
2
C
BE
= −1.0 mAdc)
= −10 mAdc)
= 0.5 Vdc)
V
V
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
CE(sat)
BE(sat)
C
C
Min
h
CEX
h
I
h
h
h
nF
f
BL
obo
t
t
FE
t
t
−
−
−
ibo
oe
T
ie
re
fe
d
s
r
f
−0.65
−5.0
Typ
−40
−40
100
250
100
2.0
0.1
3.0
60
80
60
30
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.25
−0.85
−0.95
Max
−0.4
10.0
−50
−50
300
400
225
100
500
4.5
4.0
0.1
12
10
60
35
35
75
−
−
−
−
−
−
−
−
X 10
mmhos
mAdc
nAdc
nAdc
nAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
kW
pF
pF
dB
ns
ns
−
−
− 4