NSTB1002DXV5T1G ON Semiconductor, NSTB1002DXV5T1G Datasheet - Page 4

• Manufacturer Part Number: NSTB1002DXV5T1G
• Description: TRANSISTOR BRT NPN/PNP SOT-553
• Manufacturer: ON Semiconductor

Specifications of NSTB1002DXV5T1G

• Transistor Type: 1 NPN Pre-Biased, 1 PNP
• Current - Collector (ic) (max): 100mA, 200mA
• Voltage - Collector Emitter Breakdown (max): 50V, 40V
• Resistor - Base (r1) (ohms): 47K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V / 100 @ 1mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA / 400mV @ 5mA, 50mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-553, SOT-5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.1
0.2
0.3
TYPICAL ELECTRICAL CHARACTERISTICS — PNP TRANSISTOR
0.5
NSTB1002DXV5T1G, NSTB1002DXV5T5G
0.7
1.0
T
J
= +125°C
Figure 2. DC Current Gain
2.0
−55 °C
I
+25°C
C
, COLLECTOR CURRENT (mA)
http://onsemi.com
3.0
4
5.0
7.0
10
20
30
50
70
V
100
CE
= 1.0 V
200