NSBA113EDXV6T1 ON Semiconductor, NSBA113EDXV6T1 Datasheet - Page 11

• Manufacturer Part Number: NSBA113EDXV6T1
• Description: TRANS BRT PNP DUAL 50V SOT563
• Manufacturer: ON Semiconductor

Specifications of NSBA113EDXV6T1

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 3 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -
• Other names: NSBA113EDXV6T1OS

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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6
1
e
−X−
D
5
2
4
3
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
b
0.08 (0.003)
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
−Y−
6 5 PL
E
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
M
X
0.0531
Y
1.35
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
A
http://onsemi.com
SOT−563, 6 LEAD
CASE 463A−01
0.0197
H
C
0.0118
0.5
L
ISSUE F
E
0.3
0.0394
1.0
11
0.0197
0.5
SCALE 20:1
0.0177
0.45
inches
NOTES:
mm
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
Y14.5M, 1982.
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
STYLE 1:
DIM
H
PIN 1. EMITTER 1
A
C
D
E
b
e
L
E
2. BASE 1
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
6. COLLECTOR 1
MIN
0.50
0.17
0.08
1.50
1.10
0.10
1.50
MILLIMETERS
0.5 BSC
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
NOM
0.55
0.22
0.12
1.60
1.20
0.20
1.60
MAX
0.60
0.27
0.18
1.70
1.30
0.30
1.70
0.020
0.007
0.003
0.059
0.043
0.004
0.059
MIN
NSBA114EDXV6/D
0.02 BSC
INCHES
0.021
0.009
0.005
0.062
0.047
0.008
0.062
NOM
0.023
0.007
0.066
0.051
0.012
0.066
0.011
MAX