NSBA113EDXV6T1 ON Semiconductor, NSBA113EDXV6T1 Datasheet - Page 6

• Manufacturer Part Number: NSBA113EDXV6T1
• Description: TRANS BRT PNP DUAL 50V SOT563
• Manufacturer: ON Semiconductor

Specifications of NSBA113EDXV6T1

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 3 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -
• Other names: NSBA113EDXV6T1OS

0.01
0.1
0.8
0.6
0.4
0.2
1
1
0
0
0
I
C
/I
B
= 10
Figure 14. Output Capacitance
10
V
Figure 12. V
R
10
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA144EDXV6T1
20
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
CE(sat)
20
100
T
0.1
10
A
1
= −25°C
0
Figure 16. Input Voltage versus Output Current
30
versus I
75°C
30
10
C
25°C
T
f = 1 MHz
l
T
40
E
A
A
= 0 V
I
= −25°C
C
= 25°C
, COLLECTOR CURRENT (mA)
http://onsemi.com
20
40
50
6
75°C
25°C
0.001
1000
0.01
30
100
100
0.1
10
10
1
0
Figure 15. Output Current versus Input Voltage
1
1
V
40
O
= 0.2 V
2
Figure 13. DC Current Gain
I
C
3
V
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
50
V
4
O
= 5 V
5
10
T
6
A
= 75°C
T
A
7
= 75°C
−25°C
8
25°C
25°C
9
−25°C
100
10