EMC4DXV5T1G ON Semiconductor, EMC4DXV5T1G Datasheet

EMC4DXV5T1G

Manufacturer Part Number

EMC4DXV5T1G

Description

TRANS BR NPN/PNP DUAL 50V SOT553

Manufacturer

ON Semiconductor

Datasheet

1.EMC2DXV5T1G.pdf (11 pages)

Specifications of EMC4DXV5T1G

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector (ic) (max)

100mA

Voltage - Collector Emitter Breakdown (max)

50V

Resistor - Base (r1) (ohms)

47K, 10K

Resistor - Emitter Base (r2) (ohms)

47K

Dc Current Gain (hfe) (min) @ Ic, Vce

80 @ 5mA, 10V

Vce Saturation (max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (max)

500nA

Power - Max

500mW

Mounting Type

Surface Mount

Package / Case

SOT-553, SOT-5

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Frequency - Transition

Other names

EMC4DXV5T1GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

EMC4DXV5T1G

Manufacturer:

ON Semiconductor

Quantity:

2 950

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EMC2DXV5T1G,

EMC3DXV5T1G,

EMC4DXV5T1G,

EMC5DXV5T1G

Dual Common

Base-Collector Bias

Resistor Transistors

NPN and PNP Silicon Surface Mount

Transistors with Monolithic Bias

Resistor Network

a monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. These digital transistors are

designed to replace a single device and its external resistor bias

network. The BRT eliminates these individual components by

integrating them into a single device. In the EMC2DXV5T1 series,

two complementary BRT devices are housed in the SOT−553 package

which is ideal for low power surface mount applications where board

space is at a premium.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

MAXIMUM RATINGS

and Q

October, 2010 − Rev. 6

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

The BRT (Bias Resistor Transistor) contains a single transistor with

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

These are Pb−Free Devices

, − minus sign for Q

Rating

(PNP) omitted)

= 25°C unless otherwise noted, common for Q

Symbol

CBO

CEO

Value

100

mAdc

Unit

Vdc

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

(Note: Microdot may be in either location)

ORDERING INFORMATION

Ux = Specific Device Code

MARKING DIAGRAM

= Date Code

= Pb−Free Package

http://onsemi.com

x = C, 3, E, or 5

CASE 463B

SOT−553

Ux M G

Publication Order Number:

EMC2DXV5T1/D

Related parts for EMC4DXV5T1G

EMC4DXV5T1G Summary of contents

Page 1

... EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network ...

Page 2

... DEVICE ORDERING INFORMATION, MARKING AND RESISTOR VALUES Transistor 1 − PNP Device Marking R1 (K) EMC2DXV5T1G UC EMC3DXV5T1G U3 EMC3DXV5T5G EMC4DXV5T1G UE EMC5DXV5T1G U5 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. 250 200 150 ...

Page 3

ELECTRICAL CHARACTERISTICS Characteristic Q1 TRANSISTOR: PNP OFF CHARACTERISTICS Collector-Base Cutoff Current ( Collector-Emitter Cutoff Current ( Emitter-Base Cutoff Current ( CHARACTERISTICS ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS − EMC2DXV5T1 PNP TRANSISTOR -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat ...

Page 5

TYPICAL ELECTRICAL CHARACTERISTICS − EMC2DXV5T1 NPN TRANSISTOR 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat ...

Page 6

TYPICAL ELECTRICAL CHARACTERISTICS − EMC3DXV5T1 PNP TRANSISTOR -25°C A 0.1 75°C 0. COLLECTOR CURRENT (mA) C Figure 12. V versus I CE(sat ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS − EMC3DXV5T1 NPN TRANSISTOR -25°C A 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 17. V versus I CE(sat ...

Page 8

TYPICAL ELECTRICAL CHARACTERISTICS −EMC4DXV5T1 PNP TRANSISTOR 0.1 75°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 22. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1.5 ...

Page 9

TYPICAL ELECTRICAL CHARACTERISTICS − EMC5DXV5T1 PNP TRANSISTOR 0.1 0. COLLECTOR CURRENT (mA) C Figure 28. V versus I CE(sat SERIES 1 ...

Page 10

TYPICAL ELECTRICAL CHARACTERISTICS − EMC4DXV5T1, EMC5DXV5T1 NPN TRANSISTOR -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 32. V versus I CE(sat) 1 0.8 0.6 0.4 ...

Page 11

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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