EMC4DXV5T1G ON Semiconductor, EMC4DXV5T1G Datasheet - Page 8

• Manufacturer Part Number: EMC4DXV5T1G
• Description: TRANS BR NPN/PNP DUAL 50V SOT553
• Manufacturer: ON Semiconductor

Specifications of EMC4DXV5T1G

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K, 10K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-553, SOT-5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: EMC4DXV5T1GOS

0.1
0.001
10
1
0.01
4.5
3.5
2.5
1.5
0.5
0.1
4
3
2
1
0
0
1
Figure 26. Input Voltage versus Output Current
0
0
V
O
I
C
= 0.2 V
2
/I
B
= 10
TYPICAL ELECTRICAL CHARACTERISTICS −EMC4DXV5T1 PNP TRANSISTOR
10
4
Figure 24. Output Capacitance
Figure 22. V
I
6
C
20
, COLLECTOR CURRENT (mA)
V
I
C
R
, COLLECTOR CURRENT (mA)
75°C
, REVERSE BIAS VOLTAGE (V)
8
20
10
15 20
CE(sat)
40
T
A
30
= -25°C
versus I
25 30
75°C
T
A
= -25°C
25°C
f = 1 MHz
l
T
60
E
40
A
35 40
C
= 0 V
= 25°C
http://onsemi.com
25°C
45 50
50
80
8
100
180
160
140
120
100
10
80
60
40
20
Figure 27. Inexpensive, Unregulated Current Source
0
1
1
0
Figure 25. Output Current versus Input Voltage
V
CE
2
= 10 V
4
Typical Application
2
6
for PNP BRTs
Figure 23. DC Current Gain
I
C
8
, COLLECTOR CURRENT (mA)
V
in
10
, INPUT VOLTAGE (V)
T
4
A
15 20 40 50 60 70 80 90
= 75°C
-25°C
-25°C
6
25°C
V
O
= 5 V
T
A
+12 V
= 75°C
8
25°C
LOAD
10
100