FMMT549 Fairchild Semiconductor, FMMT549 Datasheet - Page 2

• Manufacturer Part Number: FMMT549
• Description: TRANSISTOR PNP 30V 1A SUPERSOT-3
• Manufacturer: Fairchild Semiconductor

Specifications of FMMT549

• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 500mA, 2V
• Power - Max: 500mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1 A
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 0.5 W
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 30V
• Collector-base Voltage: 35V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 1A
• Dc Current Gain (min): 70
• Frequency (max): 100MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SuperSOT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: FMMT549FSTR

FMMT549 Rev. C1
© 2009 Fairchild Semiconductor Corporation
Electrical Characteristics
* DC Item are tested by Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Off Characteristics
On Characteristics*
Small Signal Characteristics
Symbol
V
V
V
BV
BV
BV
CE
BE
BE
I
I
h
C
CBO
EBO
f
FE
CEO
CBO
EBO
T
ob
(sat) Collector-Emitter Saturation Voltage I
(sat) Base-Emitter Saturation Voltage
(on)
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current Gain Bandwidth Product
Output Capacitance
Base-Emitter On Voltage
Parameter
T
A
= 25°C unless otherwise noted
I
I
I
V
V
V
V
V
V
I
I
I
I
f = 100MHz
V
V
C
C
E
C
C
C
C
C
CB
CB
EB
CE
CE
CE
CE
CB
= -100μA, I
= -10mA, I
= -100μA, I
= -1A, I
= -2A, I
= -1A, I
= -1A, V
= -100mA, V
= -4.0V, I
= -30V, I
= -30V, I
= -2.0V, I
= -2.0V, I
= -2.0V, I
= -2.0V, I
= -10V, I
Conditions
2
B
B
B
CE
= -100mA
= -200mA
= -100mA
E
E
E
B
C
C
E
C
C
C
C
= -2.0V
=0
= 0, T
= 0
= 0
= 0, f = 1MHz
CE
= 0
= 0
= -50mA
= -500mA
= -1A
= -2A
= -5V,
A
= 100°C
Min.
-5.0
100
100
-30
-35
70
80
40
Max.
-1.25
-100
-100
-500
-750
-1.0
300
-10
25
www.fairchildsemi.com
Units
MHz
mV
mV
μA
nA
nA
pF
V
V
V
V
V