FMMT549 Fairchild Semiconductor, FMMT549 Datasheet - Page 3

• Manufacturer Part Number: FMMT549
• Description: TRANSISTOR PNP 30V 1A SUPERSOT-3
• Manufacturer: Fairchild Semiconductor

Specifications of FMMT549

• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 500mA, 2V
• Power - Max: 500mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: 3-SSOT, SuperSOT-3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1 A
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 0.5 W
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 30V
• Collector-base Voltage: 35V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 1A
• Dc Current Gain (min): 70
• Frequency (max): 100MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SuperSOT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: FMMT549FSTR

FMMT549 Rev. C1
© 2009 Fairchild Semiconductor Corporation
Typical Performance Characteristics
1.2
0.8
0.6
0.4
0.2
1.6
1.4
1.2
0.8
0.6
0.4
0.2
0.0001
1
0
0.01
1
800
700
600
500
400
300
200
100
0
V
0
β = 10
ce
Voltage vs Collector Current
Collector-Emitter Saturation
Base-Emitter On Voltage vs
= 2.0V
Collector- Emitter Voltage vs
0.001
I - COLLECTOR CURRENT (A)
I - COLLECTOR CURRENT (A)
C
1
Collector Current
C
Collector-Emitter Voltage, Vce[V]
4mA
0.1
Collector current
3.5mA
0.01
2
3mA
125 °C
- 40 °C
2.5mA
0.1
3
2mA
1
125°C
25 °C
1.5mA
4
1
1mA
Ib=0.5mA
25°C
- 40°C
10
10
5
3
120
100
600
500
400
300
200
100
80
60
40
20
0.0001
1.6
1.4
1.2
0.8
0.6
0.4
0.2
0
0
0.001
0.1
Current Gain vs Collector Current
1
V
ce
Input/Output Capacitance vs
β = 10
Voltage vs Collector Current
= 2.0V
Base-Emitter Saturation
0.001
Reverse Bias Voltage
V
I - COLLECTOR CURRENT (A)
0.5
I - COLLECTOR CURRENT (A)
C
0.01
CE
125°C
- 40°C
C
25°C
- COLLECTOR VOLTAGE (V)
1
- 40 °C
125 °C
0.01
C
C
obo
ibo
0.1
0.1
25 °C
10
1
20
1
f = 1.0MHz
V = 2.0V
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ce
50
10
10
100