BC847BST/R NXP Semiconductors, BC847BST/R Datasheet - Page 4

• Manufacturer Part Number: BC847BST/R
• Description: Trans GP BJT NPN 45V 0.1A 6-Pin SOT-363 T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of BC847BST/R

• Package: 6SOT-363
• Supplier Package: SOT-363
• Pin Count: 6
• Minimum Dc Current Gain: 200@2mA@5V
• Maximum Operating Frequency: 100(Min) MHz
• Maximum Dc Collector Current: 0.1 A
• Maximum Base Emitter Saturation Voltage: 0.755(Typ)@0.5mA@10mA V
• Maximum Collector Emitter Saturation Voltage: 0.1@0.5mA@10mA|0.3@5mA@100mA V
• Maximum Collector Base Voltage: 50 V
• Maximum Collector Emitter Voltage: 45 V
• Maximum Emitter Base Voltage: 5 V

NXP Semiconductors
6. Thermal characteristics
BC847BS_3
Product data sheet
Fig 2.
Z
(K/W)
th(j-a)
10
10
10
1
3
2
10
FR4 PCB, standard footprint
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
5
0.50
0.20
0.05
0.01
= 1
0
0.75
0.33
0.10
0.02
10
4
Table 6.
[1]
[2]
Symbol
Per transistor
R
R
Per device
R
th(j-a)
th(j-sp)
th(j-a)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
10
Thermal characteristics
3
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
thermal resistance from
junction to ambient
10
Rev. 03 — 18 February 2009
2
10
1
45 V, 100 mA NPN/NPN general-purpose transistor
Conditions
in free air
in free air
1
[1]
[2]
[1]
[2]
10
Min
-
-
-
-
-
Typ
-
-
-
-
-
10
2
BC847BS
© NXP B.V. 2009. All rights reserved.
t
p
006aab420
(s)
Max
568
500
230
416
313
10
3
2
Unit
K/W
K/W
K/W
K/W
K/W
.
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