BFM520T/R NXP Semiconductors, BFM520T/R Datasheet - Page 6

• Manufacturer Part Number: BFM520T/R
• Description: Trans GP BJT NPN 8V 0.07A 6-Pin SOT-363 T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of BFM520T/R

• Package: 6SOT-363
• Supplier Package: SOT-363
• Pin Count: 6
• Minimum Dc Current Gain: 60@20mA@6V
• Maximum Operating Frequency: 9000(Typ) MHz
• Maximum Dc Collector Current: 0.07 A
• Maximum Collector Base Voltage: 20 V
• Maximum Collector Emitter Voltage: 8 V
• Maximum Emitter Base Voltage: 2.5 V

NXP Semiconductors
1996 Oct 08
handbook, halfpage
handbook, halfpage
Dual NPN wideband transistor
f = 900 MHz; V
Fig.6
I
Fig.8
C
= 5 mA; V
gain
(dB)
gain
(dB)
20
16
12
50
40
30
20
10
0
8
4
0
10
0
Gain as a function of collector current;
Gain as a function of frequency; typical
typical values.
values.
CE
CE
= 3 V.
= 3 V.
MSG/G max
10
10
2
G UM
MSG/G max
G UM
10
20
3
I C (mA)
f (MHz)
MGG203
MGG205
10
30
4
6
handbook, halfpage
handbook, halfpage
f = 2 GHz; V
Fig.7
I
Fig.9
C
= 20 mA; V
gain
(dB)
gain
(dB)
20
16
12
50
40
30
20
10
8
4
0
0
10
0
Gain as a function of collector current;
typical values.
Gain as a function of frequency; typical
values.
CE
CE
MSG/G max
= 3 V.
= 3 V.
MSG/G max
10
10
G UM
2
G UM
10
20
Product specification
3
I C (mA)
f (MHz)
BFM520
MGG204
MGG206
10
30
4