2SC4617TLQ Rohm Semiconductor, 2SC4617TLQ Datasheet - Page 2

• Manufacturer Part Number: 2SC4617TLQ
• Description: TRANSISTOR NPN 50V 0.15A SOT-416
• Manufacturer: Rohm Semiconductor

Specifications of 2SC4617TLQ

• Transistor Type: NPN
• Current - Collector (ic) (max): 150mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 150mW
• Frequency - Transition: 180MHz
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 50V
• Power Dissipation Pd: 150mW
• Dc Collector Current: 150mA
• Transistor Case Style: SOT-416
• No. Of Pins: 3
• Svhc: No SVHC (18-Jun-2010)
• Dc: RoHS Compliant
• Configuration: Single
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 7 V
• Continuous Collector Current: 0.15 A
• Maximum Dc Collector Current: 0.15 A
• Power Dissipation: 0.15 W
• Maximum Operating Frequency: 180 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 120
• Gain Bandwidth Product Ft: 180 MHz
• Dc Current Gain Hfe: 120
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2SC4617TLQTR

Packaging specifications and h
h
Electrical characterristic curves
○
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S
c
Type
2SC2412K
2SC4081
2SC4617
2SC5658
2SC1740S
www.rohm.com
FE
Fig.1
0.5
0.2
0.1
500
200
100
50
20
10
2009 ROHM Co., Ltd. All rights reserved.
50
20
10
values are classified as follows :
Item
5
2
1
h
0.2
0
FE
BASE TO EMITTER VOLTAGE : V
Ta=25°C
Fig.4 DC current gain vs.
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Grounded emitter propagation
characteristics
COLLECTOR CURRENT : I
0.5 1
120 to 270
collector current ( Ι )
h
QR
QR
QR
QR
QR
2
FE
Q
5
Package
Code
Basic ordering
unit (pieces)
10 20
V
CE
=5V
180 to 390
3V
1V
C
50 100 200
V
(mA)
R
CE
=6V
BE
(V)
FE
T146
3000
−
−
−
−
T106
3000
COLLECTOR TO EMITTER VOLTAGE : V
100
500
200
100
−
−
−
−
50
20
10
80
60
40
20
Fig.2
0
0.2
0
Ta=25°C
Fig.5 DC current gain vs.
0.5 1
COLLECTOR CURRENT : I
0.4
Taping
Grounded emitter output
characteristics ( Ι )
3000
TL
−
−
−
−
collector current ( ΙΙ )
2
0.8
2/3
Ta=100°C
5
−55°C
25°C
10 20
8000
T2L
1.2
−
−
−
−
50 100 200
C
1.6
(mA)
V
CE
0.50mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
I
B
= 5V
5000
=0A
CE
TP
−
−
−
−
(V)
2.0
Fig. 6 Collector-emitter saturation
0.05
0.02
0.01
COLLECTOR TO EMITTER VOLTAGE : V
0.5
0.2
0.1
10
0.2
8
6
4
2
0
0
Fig.3
Ta=25°C
voltage vs. collector current
0.5 1
COLLECTOR CURRENT : I
4
Grounded emitter output
characteristics ( ΙΙ )
I
2009.12 - Rev.C
C
2
/I
B
=50
8
20
10
5 10
Data Sheet
30μA
27μA
24μA
21μA
18μA
15μA
12μA
I
B
9μA
6μA
3μA
=0A
12
20
C
50 100 200
(mA)
Ta=25°C
16
CE
(V)
20