2SA1774TLQ Rohm Semiconductor, 2SA1774TLQ Datasheet - Page 3

• Manufacturer Part Number: 2SA1774TLQ
• Description: TRANSISTOR PNP 50V 0.15A SOT-416
• Manufacturer: Rohm Semiconductor

Specifications of 2SA1774TLQ

• Transistor Type: PNP
• Current - Collector (ic) (max): 150mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 150mW
• Frequency - Transition: 140MHz
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -50V
• Power Dissipation Pd: 150mW
• Dc Collector Current: -150mA
• Transistor Case Style: SC-75A
• No. Of Pins: 3
• Svhc: No SVHC (18-Jun-2010)
• Dc: RoHS Compliant
• Configuration: Single
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 50 V
• Emitter- Base Voltage Vebo: - 6 V
• Continuous Collector Current: - 0.15 A
• Maximum Dc Collector Current: 0.15 A
• Power Dissipation: 0.15 W
• Maximum Operating Frequency: 140 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 120
• Gain Bandwidth Product Ft: 140 MHz
• Dc Current Gain Hfe: 120
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2SA1774TLQTR

Electrical characteristic curves
○
2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS
c
www.rohm.com
Fig.1 Grounded emitter propagation
−0.05
500
200
100
Fig.7 Collector-emitter saturation
−0.5
−0.2
−0.1
−0.5
−0.2
−0.1
50
−50
−20
−10
2009 ROHM Co., Ltd. All rights reserved.
−0.2 −0.5 −1 −2
−5
−2
−1
−1
−0.2 −0.5 −1
Fig.4 DC current gain vs.
−0.2
Ta=25˚C
Ta=100˚C
characteristics
BASE TO EMITTER VOLTAGE : V
voltage vs. collector current (II)
COLLECTOR CURRENT : I
−0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
COLLECTOR CURRENT : I
−40˚C
25˚C
collector current (I)
Ta=100˚C
−40˚C
−2
25˚C
V
−5 −10 −20
CE
−5 −10 −20
= −5V
−3V
−1V
C
C
(
mA)
V
(
l
mA)
C
CE
−50 −100
/l
B
−50 −100
= −6V
BE
=10
(
V)
500
200
100
1000
−10
500
200
100
50
−0.2 −0.5 −1 −2
−8
−6
−4
−2
Fig.2 Grounded emitter output
50
COLLECTOR TO EMITTER VOLTAGE : V
0
0.5
Fig.8 Gain bandwidth product vs.
Ta=25˚C
Fig.5 DC current gain vs.
COLLECTOR CURRENT : I
1
characteristics (I)
−0.4
EMITTER CURRENT : I
emitter current
collector current (II)
2
Ta=100˚C
−0.8
−40˚C
3/3
25˚C
5
−5 −10 −20
−1.2
10
20
E
C
(
−1.6
mA)
V
Ta=25˚C
V
(
mA)
−31.5
−28.0
−24.5
−17.5
−14.0
−10.5
CE
CE
−21.0
−35.0
−7.0
−3.5μA
= − 12V
= −6V
−50 −100
I
B
50
=0
CE
−2.0
100
(
V)
−0.05
−0.5
−0.2
−0.1
−100
Fig.6 Collector-emitter saturation
−1
−80
−60
−40
−20
−0.2 −0.5 −1
COLLECTOR TO EMITTER VOLTAGE : V
Fig.3 Grounded emitter output
Fig.9 Collector output capacitance vs.
20
10
0
5
2
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE : V
Ta=25˚C
−500
−450
−400
−350
−300
COLLECTOR CURRENT : I
voltage vs. collector current (I)
−0.5
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
characteristics (II)
−1
I
−1
C
/I
2009.12 - Rev.B
−2
B
= 50
−2
20
10
−2
−5 −10 −20
Data Sheet
−3
−5
C
Ta=25˚C
−10
(
−4
mA)
−50μA
Ta=25˚C
f=1MHz
I
I
EB
−50 −100
−250
−200
−150
−100
E
C
= 0A
= 0A
I
(V)
B
CE
=0
−20
CB
(
(V)
V)
−5