UMT2907AT106 Rohm Semiconductor, UMT2907AT106 Datasheet - Page 3

• Manufacturer Part Number: UMT2907AT106
• Description: TRANSISTOR PNP 60V 0.6A SOT-323
• Manufacturer: Rohm Semiconductor

Specifications of UMT2907AT106

• Transistor Type: PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 200mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -60V
• Power Dissipation Pd: 200mW
• Dc Collector Current: -600mA
• Transistor Case Style: SOT-323
• No. Of Pins: 3
• Svhc: No SVHC (18-Jun-2010)
• Dc: RoHS Compliant
• Configuration: Single
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 60 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 0.6 A
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 0.2 W
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 50
• Gain Bandwidth Product Ft: 200 MHz
• Dc Current Gain Hfe: 100
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: UMT2907AT106TR

Transistors
1000
Fig.7 Grounded emitter propagation
100
100
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
1
0.1
0
0.1
1.0
Fig.10 Input/output capacitance
characteristics
COLLECTOR CURRENT : I
REVERSE BIAS VOLTAGE (
C
ob
vs. voltage
10
1
Cib
Fig.5 AC current gain vs. collector current
1.0
COLLECTOR CURRENT : I
100
10
C
Ta=25˚C
f=1MHz
Ta=25˚C
V
(
mA)
V)
CE
=10V
1000
100
10
1000
100
1000
10
100
C
10
(mA)
1
1
Fig.8 Gain bandwidth product
Fig.11 Turn-on time vs.collector
COLLECTOR CURRENT : I
COLLECTOR CURRENT : I
100
vs. collector current
UMT2907A / SST2907A / MMST2907A
current
10
10
10V
V
CC
Ta=25˚C
V
f=1kHz
CE
=30V
=10V
100
1000
100
C
C
Ta=25˚C
I
(
C
mA)
Ta=25˚C
V
(
/ I
mA)
CE
B
=10
=10V
1000
1000
0.3
0.2
0.1
Fig.6 Collector-emitter saturation
0
500
100
1.0
100
10
0.1
10
5
1
1
1
100MHz
COLLECTOR CURRENT : I
200MHz
Fig.9 Gain bandwidth product
voltage vs. collector current
Fig.12 Rise time vs. collector
COLLECTOR CURRENT : I
COLLECTOR CURRENT : I
10
10
current
10
Rev.B
250MHz
300MHz
100
100
100
C
200MHz
Ta=25˚C
I
C
(
C
C
/ I
mA)
(
(
Ta=25˚C
V
I
B
Ta=25˚C
mA)
mA)
C
=10
CC
/ I
=30V
B
1000
=10
1000
1000
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