2SB1197KT146Q Rohm Semiconductor, 2SB1197KT146Q Datasheet - Page 2

• Manufacturer Part Number: 2SB1197KT146Q
• Description: TRANSISTOR PNP 32V 0.8A SOT-346
• Manufacturer: Rohm Semiconductor

Specifications of 2SB1197KT146Q

• Transistor Type: PNP
• Current - Collector (ic) (max): 800mA
• Voltage - Collector Emitter Breakdown (max): 32V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 100mA, 3V
• Power - Max: 200mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -32V
• Power Dissipation Pd: 200mW
• Dc Collector Current: -800mA
• Transistor Case Style: SC-59
• No. Of Pins: 3
• Svhc: No SVHC (18-Jun-2010)
• Dc: RoHS Compliant
• Configuration: Single
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 32 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 0.8 A
• Maximum Dc Collector Current: 0.8 A
• Power Dissipation: 0.2 W
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 120
• Gain Bandwidth Product Ft: 200 MHz
• Dc Current Gain Hfe: 120
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2SB1197KT146QTR

Transistors
h
2SB1197K
FE
Type
Packaging specifications and h
−1000
−200
−180
−160
−140
−120
−100
−500
−200
−100
−80
−60
−40
−20
values are classified as follows :
−50
−20
−10
Item
COLLECTOR TO EMITTER VOLTAGE : V
h
−5
−2
−1
Fig.5
0
Fig.2
−1m
0
FE
Ta=25°C
I
C
/I
COLLECTOR CURRENT : I
B
−4
voltage vs. collector current
Collector-emitter saturation
=50
Grounded emitter output
characteristics ( )
20
10
120 to 270
h
QR
FE
−10m
Q
−8
Package
Code
Basic ordering unit (pieces)
−12
−100m
180 to 390
− 0.1mA
− 0.2mA
I
B
=0mA
−16
R
Ta=25°C
C
(A)
CE
FE
−20
−1
(V)
1000
500
200
100
50
20
10
−500
−400
−300
−200
−100
Fig.6
5
2
1
1m
COLLECTOR TO EMITTER VOLTAGE : V
0
0
Fig.3
−14mA
−16mA
−18mA
−20mA
Taping
T146
3000
EMITTER CURRENT : I
Gain bandwidth product vs.
emitter current
−0.2
Grounded emitter output
characteristics (
10m
−0.4
100m
−0.6
E
(A)
Ta = 25°C
V
CE
−0.8
Ta=25°C
= −5V
)
1
CE
−1.0
(V)
Fig.7
Electrical characteristic curves
1000
Fig.1
500
200
100
−1000
50
20
10
−500
−200
−100
500
200
100
−0.5
−0.2
−0.1
−0.1
−50
−20
−10
5
2
1
1k
50
20
10
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE
−5
−2
−1
−1m
5
2
1
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
0
BASE TO EMITTER VOLTAGE : V
Fig.4
Grounded emitter propagation
characteristics
COLLECTOR CURRENT : I
−0.4
−1
DC current gain vs.
collector current
−10m
Rev.A
C
C
−0.8
ob
ib
2SB1197K
V
−10
CE
−100m
−1.2
= −3V
−2V
−1V
Ta = 25°C
I
f = 1MHz
E
Ta=25°C
C
= 0A
: V
Ta = 25°C
V
(A)
CE
CB
EB
−1.6
=6V
BE
(V)
(V)
(V)
−100
2/2
−1