2SC5662T2LP Rohm Semiconductor, 2SC5662T2LP Datasheet - Page 2

• Manufacturer Part Number: 2SC5662T2LP
• Description: TRANS NPN 11V 50MA VMT3
• Manufacturer: Rohm Semiconductor

Specifications of 2SC5662T2LP

• Transistor Type: NPN
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 11V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 5mA, 10mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 82 @ 5mA, 10V
• Power - Max: 150mW
• Frequency - Transition: 3.2GHz
• Mounting Type: Surface Mount
• Package / Case: VMT3
• Npn: Transistor Polarity
• Collector Emitter Voltage V(br)ceo: 11V
• Power Dissipation Pd: 150mW
• Dc Collector Current: 10mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: VMT
• No. Of Pins: 3
• Transistor Polarity: NPN
• Dc Current Gain Hfe: 56
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 2SC5662T2LPTR

Electric characteristics curves
○
2SC5662 / 2SC4726 /2SC4083 / 2SC3838K
Fig.1 DC current gain vs. collector current
c
www.rohm.com
Fig.4 Capacitance vs. reverse bias voltage
500
200
100
5.0
2.0
1.0
0.5
0.2
0.1
2010 ROHM Co., Ltd. All rights reserved.
50
20
10
0.1 0.2
0.1 0.2
COLLECTOR TO BASE VOLTAGE : V
COLLECTOR CURRENT : I
0.5
0.5 1
1
2
2
5
5
10
10
C
(mA)
Ta =25 °C
V
20
Ta =25 °C
f=1MHz
I
20
Cob
Cre
CE
E
=0A
=10V
CB
(V)
50
50
Fig.5 Collector to base time constance
Fig.2 Collector-emitter saturation voltage
500
200
100
5.0
2.0
1.0
50
20
10
50
20
10
0.1 0.2
0.1 0.2
vs. collector current
vs. collector current
I
I
C
C
COLLECTOR CURRENT : I
COLLECTOR CURRENT : I
/ I
/ I
B
B
=10
=2
0.5
0.5
1
1
2
2
2/2
5
5
10
10
C
Ta =25 °C
V
f=31.8MHz
C
CE
(mA)
Ta =25 °C
(mA)
20
20
=10V
50
50
Fig.6 Noisfactor vs.
5.0
2.0
1.0
0.5
0.2
0.1
20
10
−0.1 −0.2
Fig.3 Gain bandwidth product
0
0.1 0.2
collector current characteristics
COLLECTOR CURRENT : I
vs. emitter current
EMITTER CURRENT : I
−0.5 −1
0.5
1
−2
2
−5 −10 −20
2010.01 - Rev.D
5
10
E
(mA)
C
Ta =25 °C
V
f=500MHz
Data Sheet
Ta =25 °C
V
CE
(mA)
20
CE
=6V
=10V
−50
50