2SA1036KT146R Rohm Semiconductor, 2SA1036KT146R Datasheet - Page 2

• Manufacturer Part Number: 2SA1036KT146R
• Description: TRANSISTOR PNP 32V 0.5A SOT-346
• Manufacturer: Rohm Semiconductor

Specifications of 2SA1036KT146R

• Transistor Type: PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 32V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 30mA, 300mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 100mA, 3V
• Power - Max: 200mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 32 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 0.2 W
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 120
• Gain Bandwidth Product Ft: 200 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2SA1036KT146R; 2SA1036KT146RTR

Electrical characteristic curves
○
2SA1036K
c
www.rohm.com
1000
500
200
100
-500
-200
-100
-0.5
-0.2
-0.1
-50
-20
-10
50
20
-0.05
-0.03
-0.02
-0.01
2009 ROHM Co., Ltd. All rights reserved.
-5
-2
-1
-1.0
-0.5
-0.3
-0.2
-0.1
Fig.1 Grounded emitter propogation
Fig.7 Collector-emitter saturation
0
BASE TO EMITTER VOLTAGE : V
-1
Ta=100 C
-0.2
-1
Ta
COLLECTOR CURRENT : I
-55 C
-2
Fig.4 DC current gain vs.
=
-0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2
COLLECTOR CURRENT : I
25 C
-2
-55 C
100 C
voltage vs. collector current ( ΙΙ )
25 C
-5
-5 -10 -20
collector current ( Ι )
-10 -20
V
CE
-50 -100 -200 -500 -1000
-50 -100 -200 -500 -1000
=-5V
-3V
-1V
C
( mA)
Ta=25 C
V
C
CE
( mA)
BE
l
C
=-3
/l
( V)
B
=
10
V
1000
-100
1000
500
200
100
-80
-60
-40
-20
500
200
100
50
20
50
0
0.5
0
COLLECTOR TO EMITTER VOLTAGE : V
Ta=25 C
-1mA
Fig.8 Gain bandwidth product vs.
-1
Fig.2 Grounded emitter output
COLLECTOR CURRENT : I
Fig.5 DC current gain vs.
1
EMITTER CURRENT : I
-2
-1
emitter current
characteristics ( Ι )
-5 -10 -20
Ta
2
collector current ( ΙΙ )
=
-2
-
2/2
100 C
25 C
55 C
5
-0.9mA
-3
-50 -100 -200 -500 -1000
-0.8mA
-0.7mA
10
-0.6mA
E
( mA)
C
-0.5mA
-0.4mA
-4
Ta
V
( mA)
20
-0.3mA
V
-0.2mA
CE
-0.1mA
CE
I
=
=-
B
=-
= 0 A
25 C
CE
5V
3V
( V)
-5
50
Fig.9 Collectur output capacitance vs.
-500
-400
-300
-200
-100
100
-0.05
-0.02
50
20
10
-0.5
-0.2
-0.1
-0.5
0
5
2
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE : V
-1
collector-base voltage. Emitter input
capacitance vs. emitter -base voltage
0
COLLECTOR TO EMITTER VOLTAGE : V
Fig.6 Collector emitter saturation
-1 -2
Fig.3 Ground emitter output
I
-1
C
COLLECTOR CURRENT : I
/I
voltage vs. collector current ( Ι )
B
=
50
20
10
-5 -10 -20
-2
characteristics ( ΙΙ )
2009.12 - Rev.B
-5
-5
Data Sheet
-50 -100 -200 -500
-10
-2.0mA
-1.5mA
-5.0mA
-4.5mA
-1.0mA
-20
-4.0mA
Ta
Ta=25 C
I
I
f
C
=
E
C
-3.5mA
-3.0mA
-0.5mA
EB
=
=
Ta
-2.5mA
1MHz
I
( mA)
=
B
0A
0A
= 0 A
25 C
( V)
=
CB
CE
25 C
( V)
( V)
-10
-50