PBSS4350D,115 NXP Semiconductors, PBSS4350D,115 Datasheet - Page 6

• Manufacturer Part Number: PBSS4350D,115
• Description: TRANS NPN 50V 3A SOT457
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS4350D,115

• Package / Case: SC-74-6
• Transistor Type: NPN
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 290mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 2A, 2V
• Power - Max: 750mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 65
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 3 A
• Maximum Dc Collector Current: 5 A
• Power Dissipation: 600 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4158-2; 934055947115; PBSS4350D T/R; PBSS4350D T/R

NXP Semiconductors
2001 Jul 13
handbook, halfpage
handbook, halfpage
(mA)
50 V low V
R CEsat
I C
V
(1) I
(2) I
(3) I
(4) I
Fig.6
I
(1) T
Fig.8
C
CE
(Ω)
/I
1200
1000
10
10
B
800
600
400
200
10
10
= 5 V.
= 20.
B
B
B
B
10
−1
−2
amb
0
1
10
= 3.96 nA.
= 3.63 nA.
= 3.30 nA.
= 2.97 mA.
3
2
0
−1
= 150 °C.
Collector current as a function of
collector-emitter voltage; typical values.
Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
0.4
1
CEsat
(5) I
(6) I
(7) I
(8) I
(2) T
0.8
B
B
B
B
10
= 2.64 nA.
= 2.31 nA.
= 1.98 nA.
= 1.65 nA.
amb
NPN transistor
= 25 °C.
10
1.2
(1)
(3)
2
(9) I
(10) I
(11) I
(12) I
(2)
1.6
10
(3) T
B
B
B
B
V CE (V)
3
I C (mA)
= 1.32 nA.
= 0.99 nA.
= 0.66 nA.
= 0.33 nA.
MGW182
MGW179
amb
= −55 °C.
10
2
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
(11)
(12)
4
6
handbook, halfpage
V
(1) I
(2) I
(3) I
(4) I
Fig.7
CE
(A)
I C
= 5 V.
B
B
B
B
5
4
3
2
1
0
= 150 mA.
= 135 mA.
= 120 mA.
= 105 mA.
0
Collector current as a function of
collector-emitter voltage; typical values.
0.4
(5) I
(6) I
(7) I
0.8
B
B
B
= 90 mA.
= 75 mA.
= 60 mA.
(1)
1.2
PBSS4350D
(8) I
(9) I
(10) I
Product data sheet
1.6
V CE (V)
B
B
B
MGW180
= 45 mA.
= 30 mA.
= 15 mA.
2
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)