PBSS5350D,115 NXP Semiconductors, PBSS5350D,115 Datasheet - Page 6

• Manufacturer Part Number: PBSS5350D,115
• Description: TRANS PNP 50V 3A SOT457
• Manufacturer: NXP Semiconductors

Specifications of PBSS5350D,115

• Package / Case: SC-74-6
• Transistor Type: PNP
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 2A, 2V
• Power - Max: 750mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Quad Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 750 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4168-2; 934055946115; PBSS5350D T/R; PBSS5350D T/R

NXP Semiconductors
PBSS5350D
Product data sheet
Fig 5.
Fig 7.
V
BEsat
(V)
−1.4
−1.2
−1.0
−0.8
−0.6
−0.4
−0.2
−10
collector current; typical values
I
(1) T
(2) T
(3) T
Base-emitter saturation voltage as a function of
I
(1) T
(2) T
(3) T
Collector-emitter saturation resistance as a function of collector current; typical values
C
C
−1
/I
/I
B
B
amb
amb
amb
amb
amb
amb
= 10
= 20
−1
= -55 °C
= 25 °C
= 150 °C
= 150 °C
= 25 °C
= -55 °C
−10
(1)
(2)
(3)
−10
R
2
CEsat
(Ω)
10
10
10
−10
10
−1
1
3
2
−10
−1
All information provided in this document is subject to legal disclaimers.
3
I
C
mgw170
(mA)
−10
−1
Rev. 5 — 23 March 2011
4
−10
Fig 6.
−10
V
(1)
(3)
(mV)
2
CEsat
−10
−10
−10
(2)
−1
−10
3
2
function of collector current; typical values
−10
I
(1) T
(2) T
(3) T
Collector-emitter saturation voltage as a
C
50 V, 3 A PNP low VCEsat (BISS) transistor
−1
/I
3
I
B
C
mgu390
= 10
amb
amb
amb
(mA)
−1
−10
= 150 °C
= 25 °C
= -55 °C
4
−10
−10
PBSS5350D
(1)
(3)
2
(2)
−10
© NXP B.V. 2011. All rights reserved.
3
I
C
mgw169
(mA)
−10
4
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