PBSS5160T,215 NXP Semiconductors, PBSS5160T,215 Datasheet - Page 5

• Manufacturer Part Number: PBSS5160T,215
• Description: TRANS PNP 60V 1A SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBSS5160T,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 330mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 500mA, 5V
• Power - Max: 400mW
• Frequency - Transition: 220MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 200
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 60 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 1 A
• Maximum Dc Collector Current: - 2 A
• Power Dissipation: 270 mW
• Maximum Operating Frequency: 220 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4347-2; 934057668215; PBSS5160T T/R; PBSS5160T T/R

NXP Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 May 12
handbook, halfpage
I
I
I
h
V
V
R
V
f
C
SYMBOL
amb
CBO
CES
EBO
T
FE
CEsat
BEsat
BEon
60 V, 1 A
NPN low V
CEsat
c
V
(1) T
(2) T
(3) T
Fig.4
CE
= 25 °C unless otherwise specified.
h FE
800
600
400
200
= 5 V.
amb
amb
amb
0
10
−1
= 100 °C.
= 25 °C.
= −55 °C.
DC current gain as a function of collector
current; typical values.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
base-emitter saturation voltage
equivalent on-resistance
base-emitter turn-on voltage
transition frequency
collector capacitance
p
1
≤ 300 μs; δ ≤ 0.02.
CEsat
PARAMETER
10
(1)
(2)
(3)
(BISS) transistor
10
2
10
3
I C (mA)
MLE130
10
4
V
V
V
V
V
V
V
I
I
I
I
V
I
f = 100 MHz
V
C
C
C
C
C
C
CB
CB
CE
EB
CE
CE
CE
CE
CB
= 100 mA; I
= 500 mA; I
= 1 A; I
= 1 A; I
= 1 A; I
= 50 mA; V
= 5 V; I
= 60 V; I
= 60 V; I
= 60 V; V
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 10 V; I
5
B
B
B
CONDITIONS
= 100 mA; note 1
= 50 mA
= 100 mA; note 1
C
C
C
C
C
handbook, halfpage
E
E
E
= 0 A
= 1 mA
= 500 mA; note 1
= 1 A; note 1
= 1 A
CE
BE
B
B
= I
= 0 A
= 0 A; T
V
(1) T
(2) T
(3) T
Fig.5
= 1 mA
= 50 mA
CE
= 0 A
= 10 V;
V BE
e
(V)
1.2
0.8
0.4
= 5 V.
= 0 A; f = 1 MHz −
amb
amb
amb
0
10
−1
= −55 °C.
= 25 °C.
= 100 °C.
j
Base-emitter voltage as a function of
collector current; typical values.
= 150 °C
1
10
−
−
−
−
250
200
100
−
−
−
−
−
−
150
MIN.
10
(1)
(2)
(3)
2
−
−
−
−
400
350
150
90
110
200
0.95
200
0.82
220
5.5
TYP.
PBSS4160T
Product data sheet
10
3
I C (mA)
100
50
100
100
−
−
−
110
140
250
1.1
250
0.9
−
10
MAX.
MLE133
10
4
nA
μA
nA
nA
mV
mV
mV
V
mΩ
V
MHz
pF
UNIT