PZT2222A,115 NXP Semiconductors, PZT2222A,115 Datasheet - Page 3
![TRANS NPN 60V 600MA SOT223](/photos/1/39/13965/568-sot-223_sc-73_sot223-1_sml.jpg)
PZT2222A,115
Manufacturer Part Number
PZT2222A,115
Description
TRANS NPN 60V 600MA SOT223
Manufacturer
NXP Semiconductors
Datasheet
1.PZT2222A115.pdf
(7 pages)
Specifications of PZT2222A,115
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
NPN
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
1V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
1.15W
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
35
Minimum Operating Temperature
- 65 C
Configuration
Single Dual Collector
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
600 mA
Maximum Dc Collector Current
800 mA
Power Dissipation
1.15 W
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-4879-2
933975330115
PZT2222A T/R
PZT2222A T/R
PZT2222A,115
933975330115
PZT2222A T/R
PZT2222A T/R
PZT2222A,115
NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
CHARACTERISTICS
T
Note
1. Pulse test: t
1999 Apr 14
R
R
I
I
h
V
V
C
C
f
Switching times (between 10% and 90% levels); (see Fig.2)
t
t
t
t
t
t
j
CBO
EBO
T
on
d
r
off
s
f
SYMBOL
SYMBOL
FE
= 25 °C unless otherwise specified.
CEsat
BEsat
NPN switching transistor
th j-a
th j-s
c
e
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
turn-on time
delay time
rise time
turn-off time
storage time
fall time
p
≤ 300 µs; δ ≤ 0.02.
PARAMETER
PARAMETER
I
I
I
I
I
I
I
T
I
I
I
I
I
I
I
I
I
I
I
I
E
E
C
C
C
C
C
C
C
C
C
C
C
C
E
C
C
Con
Boff
amb
= 0; V
= 0; V
= i
= 0; V
= 0.1 mA; V
= 1 mA; V
= 10 mA; V
= 10 mA; V
= 150 mA; V
= 150 mA; V
= 500 mA; V
= 150 mA; I
= 500 mA; I
= 150 mA; I
= 500 mA; I
= i
= 20 mA; V
= −15 mA; T
= 150 mA; I
e
c
= −55 °C
= 0; V
= 0; V
3
CB
CB
EB
= 60 V
= 60 V; T
= 5 V
CONDITIONS
CE
CB
EB
CE
CE
CE
B
B
B
B
CE
CE
CE
CE
= 10 V; f = 1 MHz
= 500 mV; f = 1 MHz
= 10 V
= 15 mA
= 50 mA
= 15 mA
= 50 mA
Bon
amb
= 10 V
= 10 V;
= 20 V; f = 100 MHz 300
= 10 V
= 1 V; note 1
= 10 V; note 1
= 10 V; note 1
note 1
= 15 mA;
amb
= 25 °C
CONDITIONS
= 125 °C
−
−
−
35
50
75
35
50
100
40
−
−
0.6
−
−
−
−
−
−
−
−
−
MIN.
VALUE
109
28
Product data sheet
PZT2222A
10
10
10
−
−
−
−
−
300
−
300
1
1.2
2
8
25
−
35
10
25
250
200
60
MAX.
UNIT
K/W
K/W
2
nA
µA
nA
mV
V
V
V
pF
pF
MHz
ns
ns
ns
ns
ns
ns
.
UNIT