2SD1664T100Q Rohm Semiconductor, 2SD1664T100Q Datasheet - Page 2

• Manufacturer Part Number: 2SD1664T100Q
• Description: TRANS NPN 32V 1A SOT-89
• Manufacturer: Rohm Semiconductor

Specifications of 2SD1664T100Q

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 32V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 100mA, 3V
• Power - Max: 2W
• Frequency - Transition: 150MHz
• Mounting Type: Surface Mount
• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Bce Npn: Transistor Polarity
• Collector Emitter Voltage V(br)ceo: 32V
• Power Dissipation Pd: 500mW
• Dc Collector Current: 500mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-89
• No. Of: RoHS Compliant
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 32 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1 A
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 0.5 W
• Maximum Operating Frequency: 150 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 82
• Gain Bandwidth Product Ft: 150 MHz
• Dc Current Gain Hfe: 82
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2SD1664T100Q; 2SD1664T100QTR

Transistors
2SD1664 / 2SD1858
FElectrical characteristics (Ta = 25_C)
FPackaging specifications and h
FE
h
values are classified as follows :
FE
FElectrical characteristic curves
250