2SD1767T100R Rohm Semiconductor, 2SD1767T100R Datasheet - Page 2

• Manufacturer Part Number: 2SD1767T100R
• Description: TRANS NPN 80V 0.7A SOT-89
• Manufacturer: Rohm Semiconductor

Specifications of 2SD1767T100R

• Transistor Type: NPN
• Current - Collector (ic) (max): 700mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 100mA, 3V
• Power - Max: 2W
• Frequency - Transition: 120MHz
• Mounting Type: Surface Mount
• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Bce Npn: Transistor Polarity
• Collector Emitter Voltage V(br)ceo: 80V
• Power Dissipation Pd: 500mW
• Dc Collector Current: 500mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-89
• No. Of: RoHS Compliant
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.7 A
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 2 W
• Maximum Operating Frequency: 120 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 120
• Gain Bandwidth Product Ft: 120 MHz
• Dc Current Gain Hfe: 120
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2SD1767T100R; 2SD1767T100RTR

Transistors
Fig.1 Ground emitter output characteristics
Electrical characteristics curves
Fig.4 Collector-emitter saturation voltage
1.0
0.8
0.6
0.4
0.2
0.05
0.02
0.01
100
0.2
0.1
50
20
10
0
5
0
2
COLLECTOR TO EMITTER VOLTAGE : V
Ta=25°C
Fig.7 Emitter input capacitance
EMITTER TO BASE VOLTAGE : V
vs. collector current
0.5
8mA
COLLECTOR CURRENT : I
5
2
10
vs. emitter-base voltage
9mA
I
1
C
/I
10
10mA
B
=20
20
4
2
50 100
6
5
10
200
8
C
Ta=25°C
(mA)
Ta=25°C
I
f=1MHz
C
=0A
20
I
EB
2mA
1mA
500 1000
3mA
B
4mA
=0A
5mA
10
(V)
CE
(V)
Fig.2 Ground emitter propagetion characteristics
1000
500m
200m
100m
0.5
0.2
0.1
Fig.5 Resistance raito vs. emitter current
500
200
100
50
20
10
10
50m
20m
10m
5m
2m
1m
50
20
10
5
2
1
Fig.8 Safe operating area
5
2
1
0
0.1 0.2
−1
COLLECTOR TO EMITTER VOLTAGE : V
BASE TO EMITTER VOLTAGE : V
T c =25°C
∗ Single
I
0.2
C
nonrepetitive
pulse
Max (Pulse)
−2
EMITTER CURRENT : I
0.5
0.4
1
−5
0.6
2
−10
5
0.8 1.0 1.2 1.4 1.6
10
−20
20
50
E
(2SD1859)
(mA)
100
Ta = 25°C
V
Ta=25°C
V
CE
CE
200 500
= 6V
−50 −100
BE
=5V
(V)
CE
(V)
1000
1000
Fig.3 DC current gain vs. collector current
500
200
100
0.05
0.02
50
0.5
0.2
0.1
100
2SD1767 / 2SD1859
50
20
10
1
2
1
5
Fig.9 Safe operating area
Fig.6 Collector output capacitance
COLLECTOR TO EMITTER VOLTAGE : V
1
COLLECTOR TO BASE VOLTAGE : V
T c =25°C
∗ Single
I
I
C
C
0.5
nonrepetitive
pulse
2
Max Pulse
Max
COLLECTOR CURRENT : I
2
vs. collector-base voltage
5
1
10 20
5
2
Rev.A
10
V
50 100 200
CE
= 5V
5
3 V
1 V
20
10
C
(2SD1767)
(mA)
Ta = 25°C
Ta=25°C
I
f=1MHz
C
=0A
20
500 5000
50 100
CB
CE
(V)
(V)
2/2