2SD2118TLQ Rohm Semiconductor, 2SD2118TLQ Datasheet - Page 4

• Manufacturer Part Number: 2SD2118TLQ
• Description: TRANS NPN 20V 5A SOT-428
• Manufacturer: Rohm Semiconductor

Specifications of 2SD2118TLQ

• Transistor Type: NPN
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 1V @ 100mA, 4A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 500mA, 2V
• Power - Max: 10W
• Frequency - Transition: 150MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 5 A
• Maximum Dc Collector Current: 10 A
• Power Dissipation: 2 W
• Maximum Operating Frequency: 150 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 120
• Gain Bandwidth Product Ft: 150 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2SD2118TLQ; 2SD2118TLQTR

Transistors
500m
200m
100m
0.05
0.02
0.01
0.5
0.2
0.1
50m
20m
10m
2
1
2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2
50
20
10
COLLECTOR TO EMITTER VOLTAGE : V
5
2
1
Fig.10 Collector-emitter
0.2 0.5 1 2
Fig.13 Safe operating area
Ic max (Pulse)
COLLECTOR CURRENT : I
saturation voltage vs.
collector current (V)
(2SD2098)
Ta=100°C
5 10 20 50 100
−25°C
25°C
Ta=25(°C)
Single pulse
Recommended land
pattern
C
l
C
(A)
/l
200
B
=50
5 10
500
CE
(V)
1000
500
200
100
Fig.11 Gain bandwidth product vs.
500m
200m
100m
10
50
20
50m
20m
10m
−1m −2m −5m−10m−20m −50m−0.1 −0.2 −0.5 −1
5
2
1
COLLECTOR TO EMITTER VOLTAGE : V
50
20
10
5
2
1
0.2 0.5 1 2
Ic max (Pulse)
Ic max (Pulse)
Fig.14 Safe operating area
emitter current
EMITTER CURRENT : I
(2SD2118)
5 10 20 50 100
2SD2098 / 2SD2118 / 2SD2097
E
Ta=25 (°C)
Single pulse
(A)
Ta=25°C
V
CE
200
=6V
500
CE
(V)
Fig.12 Collector output capacitance vs.
1000
500
200
100
50
20
10
0.1 0.2
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
0.5
1
2
5
10
Ta=25°C
f=1MHz
I
I
C
E
=0A
=0A
: V
Cob
Cib
20
CB
EB
(V)
(V)
50