2SB1182TLQ Rohm Semiconductor, 2SB1182TLQ Datasheet - Page 2

• Manufacturer Part Number: 2SB1182TLQ
• Description: TRANSISTOR PNP 32V 2A SOT-428
• Manufacturer: Rohm Semiconductor

Specifications of 2SB1182TLQ

• Transistor Type: PNP
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 32V
• Vce Saturation (max) @ Ib, Ic: 800mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 500mA, 3V
• Power - Max: 10W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Bce Pnp: Transistor Polarity
• Collector Emitter Voltage V(br)ceo: 32V
• Power Dissipation Pd: 1W
• Dc Collector Current: 2A
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-428
• No. Of Pins: 3
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 32 V
• Emitter- Base Voltage Vebo: - 5 V
• Maximum Dc Collector Current: 2 A
• Power Dissipation: 10 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: - 2 A
• Dc Collector/base Gain Hfe Min: 82
• Gain Bandwidth Product Ft: 100 MHz
• Maximum Operating Frequency: 100 MHz
• Dc Current Gain Hfe: 82
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2SB1182TLQ; 2SB1182TLQTR

Packaging specifications and h
h
Electrical characteristic curves
○
2SB1182 / 2SB1240
c
Type
2SB1182
2SB1240
www.rohm.com
FE
−1000
Fig.1 Grounded emitter propagation
−0.05
500
200
100
−500
−200
−100
−0.5
−0.2
−0.1
50
20
Fig.7 Base-emitter saturation voltage
2010 ROHM Co., Ltd. All rights reserved.
−50
−20
−10
values are classified as follows :
Item
−1
−5
−2
−1
h
FE
Fig.4 DC current gain vs.
0 −0.2
Ta=25°C
−5 −10 −20
−5 −10 −20 −50 −100
Ta=100°C
BASE TO EMITTER VOLTAGE : V
COLLECTOR CURRENT : I
characteristics
vs. collector current
−40°C
COLLETOR CURRENT : I
25°C
−0.4
h
QR
QR
Ta=100°C
collector current ( )
120 to 270
−0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0 −2.2
FE
−25°C
25°C
−50 −100
Q
Package
Code
Basic ordering unit (pieces)
−200
−200
−500 −1000 −2000
180 to 390
−500 −1000 −2000
I
C
/I
C
C
B
V
(mA)
=10
(mA)
R
CE
V
CE
= −3V
= −3V
BE
(V)
FE
2500
Fig.5 Collector-emitter saturation
TL
−
−500 Ta=25°C
−200
−100
500
200
100
−0.5
−0.4
−0.3
−0.2
−0.1
−50
50
Fig.8 Gain bandwidth product vs.
COLLECTOR TO EMITTER VOLTAGE : V
Taping
0
0
Fig.2 Grounded emitter output
Ta=25°C
−5 −10 −20
voltage vs. collector current ( )
5
COLLECTOR CURRENT : I
10
EMITTER CURRENT : I
2500
−0.4
emitter current
TV2
I
C
/I
−
characteristics
B
20
= 50
20
10
2/3
−0.8
−50 −100
50
100
−200
200
−1.2
−500 −1000 −2000
E
500 1000 2000
(mA)
C
Ta = 25°C
V
−1.6
(mA)
CE
= −5V
I
B
=0A
CE
−2
(V)
Fig.9 Collector output capacitance vs.
Fig.6 Collector-emitter saturation
−500 l
−200
−100
500
200
100
−50
−20
300
200
100
50
20
50
20
10
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE
Fig.3 DC current gain vs.
−5 −10 −20
C
−5 −10 −20
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
−0.5
/l
voltage vs. collector current ( )
B
COLLECTOR CURRENT : I
COLLECTOR CURRENT : I
=10
Ta=100°C
−1
collector curren ( )
2010.04 - Rev.C
−40°C
25°C
−2
−50 −100
−50 −100
Cib
V
Data Sheet
CE
Cob
= −6V
−5
−200
−200
−3V
−1V
−10 −20 −30
−500 −1000 −2000
−500 −1000 −2000
C
C
Ta=25°C
(mA)
Ta = 25°C
f = 1MHz
I
I
(mA)
E
C
= 0A
= 0A
: V
CB
EB
(V)
(V)