2STR1160 STMicroelectronics, 2STR1160 Datasheet - Page 3

• Manufacturer Part Number: 2STR1160
• Description: TRANS NPN LV FAST SOT-23
• Manufacturer: STMicroelectronics

Specifications of 2STR1160

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 430mV @ 100mA, 1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 500mA, 2V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Collector Emitter Voltage V(br)ceo: 60V
• Power Dissipation Pd: 500mW
• Dc Collector Current: 1A
• Dc Current Gain Hfe: 250
• Operating Temperature Range: -65°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-6960-2

2STR1160
1
Electrical ratings
Table 2.
Table 3.
1. Device mounted on PCB area of 1 cm
R
Symbol
Symbol
thj-amb
V
V
V
T
I
P
CBO
CEO
EBO
CM
T
I
stg
C
tot
J
(1)
Collector-base voltage (I
Collector-emitter voltage (I
Emitter-base voltage (I
Collector current
Collector peak current (t
Total dissipation at T
Storage temperature
Max. operating junction temperature
Thermal resistance junction-amb max
Absolute maximum rating
Thermal data
amb
C
Parameter
Parameter
P
E
= 25°C
= 0)
2
< 5ms)
= 0)
B
= 0)
-65 to 150
Value
Value
250
150
0.5
60
60
5
1
2
Electrical ratings
°C/W
Unit
Unit
°C
°C
W
V
V
V
A
A
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