2STR1160 STMicroelectronics, 2STR1160 Datasheet - Page 5

• Manufacturer Part Number: 2STR1160
• Description: TRANS NPN LV FAST SOT-23
• Manufacturer: STMicroelectronics

Specifications of 2STR1160

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 430mV @ 100mA, 1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 500mA, 2V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Collector Emitter Voltage V(br)ceo: 60V
• Power Dissipation Pd: 500mW
• Dc Collector Current: 1A
• Dc Current Gain Hfe: 250
• Operating Temperature Range: -65°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-6960-2

2STR1160
2.1
Typical characteristic (curves)
Figure 2.
Figure 4.
Figure 6.
DC current gain (@ V
Base-emitter on voltage
Collector-emitter saturation
voltage
CE
=1 V) Figure 3.
Figure 5.
Figure 7.
DC current gain (@ V
voltage
Base-emitter saturation
Capacitance curves
Electrical characteristics
CE
=2 V)
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