2N6388 STMicroelectronics, 2N6388 Datasheet

TRANS DARL NPN 80V 10A TO-220

2N6388

Manufacturer Part Number
2N6388
Description
TRANS DARL NPN 80V 10A TO-220
Manufacturer
STMicroelectronics
Type
High Current, Powerr
Datasheets
1.2N6388.pdf (5 pages)
2.2N6388.pdf (3 pages)

Specifications of 2N6388

Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
10A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
3V @ 100mA, 10A
Current - Collector Cutoff (max)
1mA
Dc Current Gain (hfe) (min) @ Ic, Vce
1000 @ 5A, 3V
Power - Max
65W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
80 V
Maximum Dc Collector Current
10 A
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Current, Gain
100
Current, Input
0.25 A
Current, Output
10 A
Package Type
TO-220
Polarity
NPN
Power Dissipation
65 W
Primary Type
Si
Voltage, Collector To Emitter, Saturation
3 V
Voltage, Input
5 V
Voltage, Output
80 V
Collector Emitter Voltage V(br)ceo
80V
Power Dissipation Pd
65W
Dc Collector Current
10A
Dc Current Gain Hfe
1000
No. Of Pins
3
Collector Current @ Hfe
3A
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-2562-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
2N6388
Manufacturer:
ST
0
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
2N6388G
Manufacturer:
ON
Quantity:
2 360
Company:
H&T Electronics H&T Electronics
Part Number:
2N6388G
Quantity:
350
DESCRIPTION
The device is a silicon Epitaxial-Base NPN power
transistor in monolithic Darlington configuration
mounted in Jedec TO-220 plastic package.
It is inteded for use in low and medium frequency
power applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
STMicroelectronics PREFERRED
SALESTYPE
NPN DARLINGTON
HIGH CURRENT CAPABILITY
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
V
V
V
V
V
T
P
I
CBO
CEV
CER
CEO
EBO
I
CM
I
T
stg
C
B
tot
j
SILICON NPN POWER DARLINGTON TRANSISTOR
Collector-Base Voltage (I
Collector-Emitter Voltage (V
Collector-Emitter Voltage (R
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current
Base Current
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
Parameter
c
C
25
B
= 0)
= 0)
B
BE
o
BE
C
= 0)
= -1.5V)
100 )
INTERNAL SCHEMATIC DIAGRAM
R
1
Typ. = 10 K
-65 to 150
Value
0.25
150
80
80
80
80
10
15
65
TO-220
5
R
2
Typ. = 160
1
2
2N6388
3
Unit
o
o
W
V
V
V
V
V
A
A
A
C
C
1/5

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2N6388 Summary of contents

Page 1

... Emitter-Base Voltage (I EBO I Collector Current C I Collector Peak Current CM I Base Current B P Total Dissipation at T tot T Storage Temperature stg T Max. Operating Junction Temperature j INTERNAL SCHEMATIC DIAGRAM = -1.5V) BE 100 ) 2N6388 TO-220 R Typ Typ. = 160 1 2 Value 0.25 65 -65 to 150 150 Unit ...

Page 2

... THERMAL DATA R Thermal Resistance Junction-case thj-case ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CEV Current (V = -1.5V Collector Cut-off CEO Current ( Emitter Cut-off Current EBO ( Collector-Emitter CEO(sus) Sustaining Voltage ( Collector-Emitter CER(sus) Sustaining Voltage V Collector-Emitter CEV(sus) Sustaining Voltage V Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter Voltage ...

Page 3

... DIM. MIN. A 4.40 C 1. 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2 13.0 L5 2.65 L6 15.25 L7 6.2 L9 3.5 DIA. 3.75 4/5 TO-220 MECHANICAL DATA mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 16.4 14.0 2.95 15.75 6 ...

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