2N6388 STMicroelectronics, 2N6388 Datasheet

TRANS DARL NPN 80V 10A TO-220

2N6388

Manufacturer Part Number
2N6388
Description
TRANS DARL NPN 80V 10A TO-220
Manufacturer
STMicroelectronics
Type
High Current, Powerr
Datasheets

Specifications of 2N6388

Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
10A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
3V @ 100mA, 10A
Current - Collector Cutoff (max)
1mA
Dc Current Gain (hfe) (min) @ Ic, Vce
1000 @ 5A, 3V
Power - Max
65W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
80 V
Maximum Dc Collector Current
10 A
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Current, Gain
100
Current, Input
0.25 A
Current, Output
10 A
Package Type
TO-220
Polarity
NPN
Power Dissipation
65 W
Primary Type
Si
Voltage, Collector To Emitter, Saturation
3 V
Voltage, Input
5 V
Voltage, Output
80 V
Collector Emitter Voltage V(br)ceo
80V
Power Dissipation Pd
65W
Dc Collector Current
10A
Dc Current Gain Hfe
1000
No. Of Pins
3
Collector Current @ Hfe
3A
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-2562-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N6388
Manufacturer:
ST
0
Part Number:
2N6388G
Manufacturer:
ON
Quantity:
2 360
Company:
Part Number:
2N6388G
Quantity:
350
DESCRIPTION
The device is a silicon Epitaxial-Base NPN power
transistor in monolithic Darlington configuration
mounted in Jedec TO-220 plastic package.
It is inteded for use in low and medium frequency
power applications.
ABSOLUTE MAXIMUM RATINGS
August 2000
Symbol
STMicroelectronics PREFERRED
SALESTYPE
NPN DARLINGTON
HIGH CURRENT CAPABILITY
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
V
V
V
V
V
T
P
I
CBO
CEV
CER
CEO
EBO
I
CM
I
T
stg
C
B
tot
j
SILICON NPN POWER DARLINGTON TRANSISTOR
Collector-Base Voltage (I
Collector-Emitter Voltage (V
Collector-Emitter Voltage (R
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current
Base Current
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
Parameter
c
C
25
B
= 0)
= 0)
B
BE
o
BE
C
= 0)
= -1.5V)
100 )
INTERNAL SCHEMATIC DIAGRAM
R
1
Typ. = 10 K
-65 to 150
Value
0.25
150
80
80
80
80
10
15
65
TO-220
5
R
2
Typ. = 160
1
2
2N6388
3
Unit
o
o
W
V
V
V
V
V
A
A
A
C
C
1/5

Related parts for 2N6388

2N6388 Summary of contents

Page 1

... EBO I Collector Current C I Collector Peak Current CM I Base Current B P Total Dissipation at T tot T Storage Temperature stg T Max. Operating Junction Temperature j August 2000 INTERNAL SCHEMATIC DIAGRAM = -1.5V) BE 100 ) 2N6388 TO-220 R Typ Typ. = 160 1 2 Value 0.25 65 -65 to 150 150 Unit ...

Page 2

... THERMAL DATA R Thermal Resistance Junction-case thj-case ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CEV Current (V = -1.5V Collector Cut-off CEO Current ( Emitter Cut-off Current EBO ( Collector-Emitter CEO(sus) Sustaining Voltage ( Collector-Emitter CER(sus) Sustaining Voltage V Collector-Emitter CEV(sus) Sustaining Voltage V Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter Voltage ...

Page 3

... Safe Operating Area Collector Emitter Saturation Voltage Collector Emitter Saturation Voltage DC Current Gain DC Transconductance Saturated Switching Characteristics 2N6388 3/5 ...

Page 4

... DIM. MIN. A 4.40 C 1. 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2 13.0 L5 2.65 L6 15.25 L7 6.2 L9 3.5 DIA. 3.75 4/5 TO-220 MECHANICAL DATA mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 16.4 14.0 2.95 15.75 6 ...

Page 5

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