2SA1943-O(Q) Toshiba, 2SA1943-O(Q) Datasheet - Page 2

• Manufacturer Part Number: 2SA1943-O(Q)
• Description: TRANS PNP -230V -15A 2-21F1A
• Manufacturer: Toshiba

Specifications of 2SA1943-O(Q)

• Transistor Type: PNP
• Current - Collector (ic) (max): 15A
• Voltage - Collector Emitter Breakdown (max): 230V
• Vce Saturation (max) @ Ib, Ic: 3V @ 800mA, 8A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 1A, 5V
• Power - Max: 150W
• Frequency - Transition: 30MHz
• Mounting Type: Through Hole
• Package / Case: 2-21F1A (TO-247 L)
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 230 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 15 A
• Power Dissipation: 150000 mW
• Dc Collector/base Gain Hfe Min: 80
• Maximum Operating Frequency: 30 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2SA1943-OQ

Electrical Characteristics
Marking
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Note: h
FE (1)
Characteristics
classification R: 55 to 110, O: 80 to 160
2SA1943
TOSHIBA
JAPAN
(Ta = 25°C)
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
V
V
Symbol
(BR) CEO
h
h
CE (sat)
I
I
FE (1)
FE (2)
V
CBO
EBO
C
f
BE
T
ob
(Note)
V
V
I
V
V
I
V
V
V
C
C
CB
EB
CE
CE
CE
CE
CB
= −50 mA, I
= −8 A, I
= −230 V, I
= −5 V, I
= −5 V, I
= −5 V, I
= −5 V, I
= −5 V, I
= −10 V, I
2
B
Test Condition
= −0.8 A
C
C
C
C
C
B
E
= 0
= −1 A
= −7 A
= −7 A
= −1 A
E
= 0
= 0, f = 1 MHz
= 0
−230
Min
55
35
―
―
―
―
―
―
Typ.
−1.5
−1.0
360
60
30
―
―
―
―
2006-11-09
2SA1943
−5.0
−5.0
−3.0
−1.5
Max
160
―
―
―
―
MHz
Unit
μA
μA
pF
V
V
V