BCW60B,235 NXP Semiconductors, BCW60B,235 Datasheet - Page 2

• Manufacturer Part Number: BCW60B,235
• Description: TRANSISTOR NPN 32V 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BCW60B,235

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 32V
• Vce Saturation (max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 933324090235; BCW60B /T3; BCW60B /T3

NXP Semiconductors
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 32 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complements: BCW61 series.
MARKING
Note
1. ∗ = p : Made in Hong Kong.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1999 Apr 22
BCW60B
BCW60C
BCW60D
V
V
V
I
I
I
P
T
T
T
C
CM
BM
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
NPN general purpose transistors
∗ = t : Made in Malaysia.
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
PARAMETER
MARKING CODE
AC∗
AD∗
AB∗
(1)
open emitter
open base
open collector
T
amb
≤ 25 °C
2
PINNING
CONDITIONS
handbook, halfpage
PIN
1
2
3
Fig.1 Simplified outline (SOT23) and symbol.
Top view
base
emitter
collector
1
3
−
−
−
−
−
−
−
−65
−
−65
MIN.
DESCRIPTION
2
BCW60 series
MAM255
32
32
5
100
200
200
250
+150
150
+150
Product data sheet
MAX.
1
3
2
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT