MMBTA42,215 NXP Semiconductors, MMBTA42,215 Datasheet - Page 2

• Manufacturer Part Number: MMBTA42,215
• Description: TRANS NPN 300V 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of MMBTA42,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 300V
• Transistor Type: NPN
• Frequency - Transition: 50MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 10V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Dc Collector/base Gain Hfe Min: 25 at 1 mA at 10 V
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 300 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 50 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933818950215::MMBTA42 T/R::MMBTA42 T/R

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN high-voltage transistor in a SOT23 plastic package.
PNP complement: MMBTA92.
MARKING
Note
1.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
2000 Apr 11
MMBTA42
V
V
V
I
I
I
P
T
T
T
C
CM
BM
stg
j
amb
Low current (max. 100 mA)
High voltage (max. 300 V).
Telephony
Professional communication equipment.
CBO
CEO
EBO
tot
NPN high-voltage transistor
SYMBOL
= p: made in Hong Kong.
= t: made in Malaysia.
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
7D
PARAMETER
MARKING CODE
(1)
open emitter
open base
open collector
T
amb
2
PINNING
CONDITIONS
25 C; note 1
handbook, halfpage
Fig.1 Simplified outline (SOT23) and symbol.
Top view
PIN
1
2
3
1
3
65
65
MIN.
base
emitter
collector
2
Product specification
DESCRIPTION
300
300
6
100
200
100
250
+150
150
+150
MAM255
MAX.
MMBTA42
1
V
V
V
mA
mA
mA
mW
C
C
C
3
2
UNIT